Method for manufacturing pyrochlore phase bismuth titanate functional films on surfaces of glass substrates

A glass substrate, phase bismuth titanate technology, applied in chemical instruments and methods, glass/slag layered products, layered products, etc., can solve the complex vacuum environment and process system of process equipment, film uniformity and thickness difficult to control , high cost and other problems, to achieve the effect of highly ordered bond formation, less defects and strong bonding force

Inactive Publication Date: 2012-09-12
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the chemical solution deposition method is simple in process and low in cost, it is difficult to control the uniformity and thickness of the film
The advantage of the pulsed laser deposition method is that the obtained film has good quality, high purity, and good bonding with the substrate, but the process equipment is relatively complicated, requires strict vacuum environment and process system, and is expensive

Method used

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  • Method for manufacturing pyrochlore phase bismuth titanate functional films on surfaces of glass substrates
  • Method for manufacturing pyrochlore phase bismuth titanate functional films on surfaces of glass substrates
  • Method for manufacturing pyrochlore phase bismuth titanate functional films on surfaces of glass substrates

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Embodiment 1

[0019] A method for preparing a pyrochlore-phase bismuth titanate functional thin film on the surface of a glass substrate of the present invention comprises the following steps:

[0020] Step 1: Functionalization of the substrate. The glass substrate was ultrasonically washed with deionized water, absolute ethanol and acetone for 10 minutes respectively, and then dried in nitrogen gas and then soaked in OTS (octadecyltrichlorosilane) and toluene (the volume ratio of OTS and toluene was 1:99). Deposit in the mixed solution for 30s-20min to obtain an OTS monolayer film, then bake at 120°C for 5 minutes to remove the residual solution on the surface, and then irradiate with ultraviolet light for 40min to realize the functionalization of the substrate surface.

[0021] Step 2: Configure the precursor solution. Considering that Bi is volatile at high temperature, the precursor solution was prepared with a Bi:Ti molar ratio of 1.20:1. Bi(NO 3 ) 3 ·5H 2 O is dissolved in a mixe...

Embodiment 2

[0025] A method for preparing a pyrochlore-phase bismuth titanate functional thin film on the surface of a glass substrate of the present invention comprises the following steps:

[0026] Step 1: Functionalization of the substrate. The glass substrate was ultrasonically washed with deionized water, absolute ethanol and acetone for 10 minutes respectively, and then dried in nitrogen gas and then soaked in OTS (octadecyltrichlorosilane) and toluene (the volume ratio of OTS and toluene was 1:99). Deposit in the mixed solution for 30s-20min to obtain an OTS monolayer film, then bake at 120°C for 5 minutes to remove the residual solution on the surface, and then irradiate with ultraviolet light for 40min to realize the functionalization of the substrate surface.

[0027] Step 2: Configure the precursor solution. Considering that Bi is volatile at high temperature, the precursor solution was prepared with a Bi:Ti molar ratio of 1.20:1. Bi(NO3 ) 3 ·5H 2 O is dissolved in a mixed ...

Embodiment 3

[0031] A method for preparing a pyrochlore-phase bismuth titanate functional thin film on the surface of a glass substrate of the present invention comprises the following steps:

[0032] Step 1: Functionalization of the substrate. The glass substrate was ultrasonically washed with deionized water, absolute ethanol and acetone for 10 minutes respectively, and then dried in nitrogen gas and then soaked in OTS (octadecyltrichlorosilane) and toluene (the volume ratio of OTS and toluene was 1:99). Deposit in the mixed solution for 30s-20min to obtain an OTS monolayer film, then bake at 120°C for 5 minutes to remove the residual solution on the surface, and then irradiate with ultraviolet light for 40min to realize the functionalization of the substrate surface.

[0033] Step 2: Configure the precursor solution. Considering that Bi is volatile at high temperature, the precursor solution was prepared with a Bi:Ti molar ratio of 1.20:1. Bi(NO 3 ) 3 ·5H 2 O is dissolved in a mixe...

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Abstract

The invention provides a method for manufacturing pyrochlore phase bismuth titanate functional films on surfaces of glass substrates, which includes the following steps: manufacturing an OTS monofilm on a glass substrate; preparing a precursor solution with Bi and Ti, wherein the molar ratio of the Bi and Ti is (1.20 to 1.00) : 1;dissolving Bi(NO3)3.5H2O in a mixed solution composed of ethylene glycol and ethylene glycol methyl ether, dissolving Ti(OC4H9)4 in absolute ethyl alcohol, mixing and stirring two solutions evenly, maintaining total concentration of the solution to be 0.05 mol / L to 0.10 mol / L, and dropwise adding ammonia water to adjust pH values to prepare a Bi2Ti2O7 precursor solution; placing the glass substrate bearing the OTS monofilm in the precursor solution to obtain amorphous films; and preserving the amorphous films at a temperature of 500 DEG C to 560 DEG C for 2 hours to obtain crystal pyrochlore phase Bi2Ti2O7 films. The Bi2Ti2O7 films manufactured through the method has the advantages of being mature in crystal structure, high in purity, smooth and neat in surface, uniform and compact.

Description

technical field [0001] The invention relates to the field of preparation of functional materials, in particular to a pyrochlore phase bismuth titanate (Bi 2 Ti 2 o 7 ) film preparation method. Background technique [0002] Bismuth titanate series have different components and structures, such as Bi 4 Ti 3 o 12 , Bi 2 Ti 2 o 7 , Bi 20 Ti 2 o 20 Wait. Among them Bi 2 Ti 2 o 7 It belongs to pyrochlore structure, which can be regarded as a mixture of Ti-O octahedron and Bi-O tetrahedron structure. The general chemical formula is A 2 B 2 o 7 , the lattice parameter is a=b=c=2.068, which belongs to the cubic crystal system, so Bi 2 Ti 2 o 7 Thin film is not piezoelectric and ferroelectric, but it has a high dielectric constant. [0003] With the gate insulating layer (SiO 2 ) has been continuously thinned, problems such as increased leakage current and poor device stability have emerged. One of the ways to solve these problems is to use materials with higher ...

Claims

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Application Information

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IPC IPC(8): C04B35/475C04B35/622B32B17/06B32B18/00
Inventor 夏傲尹君谈国强
Owner SHAANXI UNIV OF SCI & TECH
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