Interface processing method for germanium-base device
An interface treatment, germanium-based technology, used in semiconductor/solid-state device manufacturing, electrical components, metal material coating processes, etc., can solve problems such as immaturity, interface performance is not ideal, device performance is not stable enough, etc., to slow down the secondary Natural oxidation, conducive to process integration, and the effect of improving interface quality
Active Publication Date: 2015-04-15
PEKING UNIV
View PDF3 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, at present, the preparation technology of germanium-based MOS devices is not mature enough, and the performance of the devices is not stable enough. One of the main factors limiting the development of germanium-based MOS devices is that the interface performance between the gate dielectric and the substrate of germanium-based MOS devices is not ideal.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0016] Below in conjunction with accompanying drawing, the method flow process of the present invention is further elaborated by specific embodiment:
[0017] figure 1 The flow chart of the interface processing method of the germanium-based device adopted for the embodiment:
[0018] Step 1: Provide a germanium-based substrate. The semiconductor germanium substrate may be a bulk germanium substrate, an epitaxial germanium substrate or a germanium-on-insulator (GOI) substrate or the like.
[0019] Step 2: cleaning the germanium-based substrate. Firstly, the substrate is organically cleaned, alternately washed twice with acetone and ethanol, and then rinsed repeatedly with deionized water to remove oil and organic pollutants on the substrate; then acid cleaning with hydrochloric acid, heating and boiling in dilute hydrochloric acid , and then rinsed repeatedly with deionized water to remove inorganic pollutants, metal particles, etc. The purpose of cleaning is to remove orga...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| surface roughness | aaaaa | aaaaa |
Login to View More
Abstract
A surface treatment method for a germanium-based device, comprising the following steps: 1) washing a semiconductor germanium-based substrate; 2) immersing in a concentrated hydrochloric acid solution of a mass percent concentration between 15% and 36%, then repeatedly rinsing with deionized water until clean, and removing a natural oxide layer on the surface of the germanium-based substrate; and, 3) immersing the germanium-based substrate in a diluted hydrochloric acid solution of a mass percent concentration between 5% and 10%, then repeatedly rinsing with deionized water until clean, and completing a passivation treatment of the surface of the germanium-based device.
Description
technical field [0001] The invention belongs to the technical field of ultra-large-scale integrated circuit (ULSI) process manufacturing, and specifically relates to an interface treatment method suitable for germanium-based devices. Background technique [0002] With the continuous reduction of feature size, traditional silicon-based MOS devices face many challenges and limitations: such as mobility degradation, DIBL effect, hot carrier effect, NBTI, etc. Among them, the problem of mobility degradation will affect the improvement of the working speed of integrated circuits, so it is urgent to find a new material and / or a new device structure to change the status quo. Because germanium materials have higher electron and hole mobility than silicon materials, lower doping activation temperature, and the preparation process of germanium channel devices is compatible with traditional CMOS processes, it has attracted widespread attention. However, at present, the preparation tec...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
CPCC23C22/58C23G1/10H01L21/02057H01L21/02052
Inventor 黄如李敏安霞黎明林猛张兴
Owner PEKING UNIV