A superconducting field effect transistor, its manufacturing method and application method

Abstract

The invention provides a superconductive field effect transistor as well as a manufacturing method and an application method thereof. A superconductor source electrode, a superconductor drain electrode, a channel region and a grid electrode structure are formed on a semiconductor substrate on an insulator, wherein the channel region is located between the superconductor source electrode and the superconductor drain electrode; and the channel region, the superconductor source electrode and the superconductor drain electrode are the same in doping conducting types. A positive voltage or a negative voltage can be applied to the grid electrode structure through control so as to control on or off of the superconductive field effect transistor. With the adoption of the superconductive field effect transistor, working of nanoscale short channel devices can be realized, the problem of failure of nanoscale short channel inversion devices caused by increasing leakage current of the devices because source drain impurity ions diffuse to a channel is avoided at the same time, and the reliability of the devices is improved. Superconductivity of a semiconductor channel can be realized by using shorter channels, thus the response speed of the devices is greatly quickened.. The superconductive field effect transistor has the characteristics of large current, strong driving force, high speed, rapid response and simplicity in preparing process and is suitable for industrial production.

Description

technical field [0001] The invention belongs to the field of semiconductors, and in particular relates to a superconducting field effect transistor, a manufacturing method and an application method thereof. Background technique [0002] Superconducting field effect transistor, SuperconductorFET (SFET): It is an insulated gate field effect transistor that uses a superconducting channel to conduct electricity. Its source and drain electrode contact metals are superconductors (see illustration). Since the coherence length of the superconductor—the correlation length between the superconducting electron pairs (the spatial length of the correlation effect) is about 1nm to 100nm (within this length, there can be many superconducting electron pairs), the normal contact with the superconductor Conductor or semiconducting thin films will also become superconducting. Therefore, for a shorter device channel, it can also become a superconducting state, so this superconducting field ef...

AI Technical Summary

Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a superconducting field effect transistor, its manufacturing method and its application method, which are used to solve the problem that the channel length of superconducting field effect transistors in the prior art is difficult to further reduce. To the nanoscale size, it is easy to cause device leakage due to the diffusion of impurity ions in the source and drain regions to the channel region, which in turn leads to the degradation of transistor performance

Images