Thermal-field-adjustable furnace for growing crystals through kyropoulos method
A technology of crystal growth furnace and Kyropoulos method, which is applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of adjustment lag, low yield rate, and difficulty in adapting to industrialization requirements, etc., to improve yield rate, The effect of strengthening the ability of the heat field
Inactive Publication Date: 2012-09-19
上海晨安电炉制造有限公司
View PDF0 Cites 28 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0007] The current thermal field regulation methods of the Kyropoulos crystal growth furnace mainly include cooling water adjustment, seed crystal pulling and rotation, and cooling. The adjustment of the thermal field is relatively lagging, and the above-mentioned complex and changeable environmental changes cannot be responded to in a timely manner. The yield is low, and it is difficult to adapt to the requirements of industrialization.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0015] The specific process of sapphire crystal growth is described below:
[0016] Put the weighed high-purity alumina raw material into the crucible (6), after the seed crystal (12) is installed, cover the upper insulation layer (13), and put the seed crystal (12) through the rotating and pulling device (16). ) down to about the middle of the upper insulation layer, vacuumize the furnace body (2) to reach a predetermined vacuum degree of 6×10 -3 After Pa, start to heat up to 2100°C. After the raw materials are completely melted, slowly lower the temperature to near the melting point of alumina, enter the melt stabilization stage, observe the state of the furnace through the observation hole (15), and wait until the surface liquid flow presents spokes flowing toward the center When it is in shape, the seed crystal (12) can be lowered slowly for many times to prevent the seed crystal (12) from being subjected to too much thermal shock, and then perform seeding, shouldering, eq...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention provides a thermal-field-adjustable furnace for growing crystals through a kyropoulos method and belongs to the technical field of crystal growing devices. Due to the fact that an upper thermal insulation layer is connected to an upper thermal insulation layer lifting device, the position of the upper thermal insulation layer can be adjusted by means of the lifting device, then radiation boundary conditions of a crucible and materials can be adjusted, and accordingly a thermal field can be adjusted timely and efficiently. Additionally, combined with means of cooling water volume adjustment, lifting and rotation of seed rods, temperature reduction and the like, the capacity for adjusting and controlling the thermal field of the system can be greatly improved, flexible and effective adjustment can be performed according to different needs for the thermal field of crystal growth in different stages, difference between different devices or between different furnace times of a device or between different technical processes of a furnace and other changed conditions such as feeding volume and environment conditions, and quality and yield of the crystals can be greatly improved. Besides, the thermal-field-adjustable furnace effectively improves stability and repeatability of the process and is particularly suitable for industrialized production of large sapphire crystals.
Description
technical field [0001] The invention relates to the technical field of LED substrate-level sapphire crystal growth furnace manufacturing, in particular to a Kyropoulos crystal growth furnace structure with adjustable thermal field. Background technique [0002] Light Emitting Diode (LED) has outstanding advantages such as long life, low energy consumption, small size, fast response, shock resistance and low temperature resistance, and low pollution. Its application fields are extremely broad and its market potential is huge. It is called "human lighting Another revolution in history." LED substrate materials have an important relationship with its performance and cost. Because sapphire crystal has a unique lattice structure, excellent mechanical properties, thermal properties, optical properties, mechanical properties and chemical stability, it has become a GaN semiconductor light-emitting diode for practical applications. The most ideal substrate material accounts for more...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More IPC IPC(8): C30B29/20C30B15/00
Inventor 廖永建徐炜沈禹孙矿
Owner 上海晨安电炉制造有限公司