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Method for preparing graphene nanoribbon

A graphene nanoribbon and graphene technology, applied in the direction of graphene, nanocarbon, nanotechnology, etc., can solve the problems of uneven edges of graphene nanoribbons, difficulties in meeting the requirements of devices and integrated circuits, and many defects

Inactive Publication Date: 2012-10-03
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is very difficult to prepare graphene nanoribbons and their arrays by these methods, and the prepared graphene nanoribbons have uneven edges, many defects, and are easily polluted, which is difficult to meet the requirements of devices and integrated circuits.

Method used

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  • Method for preparing graphene nanoribbon
  • Method for preparing graphene nanoribbon
  • Method for preparing graphene nanoribbon

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] (1) Using the method of mechanical exfoliation, using highly oriented graphite, in 300nm-SiO 2 Graphene is prepared on a p-Si substrate, and an area of ​​about 40 μm is selected 2 Triangular graphene sample, the sample's The crystal orientation is perpendicular to the angle bisector k of the vertex angle α, and the angle α=60°.

[0026] (2) Using electron beam exposure and thermal evaporation, vapor-deposit 4nm Ni at a distance of about 500nm from the corner vertex on one side and then anneal, and deposit a Ni particle with a diameter of less than 100nm on the edge of the graphene.

[0027] (3) Put the sample into a high temperature tube furnace under Ar / H 2 (150sccm / 30sccm) atmosphere annealing, before heating up, ventilate for 10min, raise the temperature to 900°C for 30min, keep warm for 2h, continue to ventilate until naturally cooled to room temperature, and then take out the sample.

[0028] (4) Observed by SEM such as image 3 Sequential etch traces and resu...

Embodiment 2

[0030] (1) CVD growth of graphene on copper foil, and then transfer the graphene to 90nm-SiO 2 / p-Si substrate.

[0031] (2) Select a piece with an area of ​​about 80 μm 2 Graphene as the experimental object, determined by STM crystal direction.

[0032] (3) Combining electron beam exposure and plasma etching, etch the graphene into a fan shape, so that the angle bisector k of the top angle α of the fan shape and The crystal orientation is vertical.

[0033] (4) Combining electron beam exposure and electron beam evaporation, such as figure 2 The area shown (L=150nm) is annealed after evaporation of 3nm Co, and a Co particle with a diameter of about 50~80nm is deposited on the edge of the graphene.

[0034] (3) Put the sample into a high temperature tube furnace under Ar / H 2 Annealed under atmosphere. Pass Ar / H before annealing starts 2 (100sccm / 20sccm), start to heat up after aeration for 10min, keep warm for 1.5h after heating up to 1100°C, continue to feed Ar and ...

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Abstract

The invention discloses a method for preparing graphene nanoribbon. The method can be used for preparing a graphene nanoribbon array and various devices based on the structure. The method takes advantage of the property of metal nanoparticles that the metal nanoparticles can etch graphene along the preferential direction in the annealing process, under the confinement effect of the shape boundary of the graphene, the metal nanoparticles etch in the z-shaped track, so that the graphene nanoribbon and an array thereof are formed. By adopting the method provided by the invention, the graphene nanoribbon array in the nanoscale width can be etched, and the graphene nanoribbon has a smooth edge in atomic scale and the same chirality.

Description

technical field [0001] The invention proposes a method for preparing graphene nanobelts, which can be used to prepare graphene nanobelt arrays and various devices based on the structure, and has application prospects in the fields of physics, materials science and micro-nano electronics. Background technique [0002] Graphene is currently the hottest two-dimensional material and the thinnest material ever discovered. This monoatomic layer material, which can exist stably in the atmosphere, has a special crystal structure, which determines its excellent electrical transport properties. Graphene has extremely high carrier mobility, high current carrying density and strong resistance to electromigration. Graphene materials also have the advantage of natural scale, which makes them have great application prospects in the field of microelectronic devices and integrated circuits. [0003] However, graphene is a semi-metal with zero bandgap, so the switching ratio of transistors ...

Claims

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Application Information

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IPC IPC(8): C01B31/04B82Y40/00B82Y30/00C01B32/184
Inventor 魏子钧叶天扬周梦杰傅云义黄如张兴
Owner PEKING UNIV