Bi-polycrystal strain SiGe SOI (Silicon On Insulator) Bi CMOS (Complementary Metal-Oxide-Semiconductor) integrated device and preparation method thereof

Abstract

The invention discloses a bi-polycrystal strain SiGe SOI (Silicon On Insulator) Bi CMOS (Complementary Metal-Oxide-Semiconductor) integrated device and a preparation method of the device. The preparation process is as follows: growing an N type Si epitaxial layer on an SOI substrate to be taken as a collector region of a bipolar device, preparing a deep-trench isolator, then sequentially preparing base polycrystal, a base region and an emitter region to form a SiGe HBT (Heterojunction Bipolar Transistor) device; and growing strain SiGe material on the substrate, conducting photoetching on the active regions of an NMOS (N-Channel Metal Oxide Semiconductor) device and a PMOS (P-Channel Metal Oxide Semiconductor) device, injecting P type ions in the region of the NMOS device to prepare virtual grid, conducting self alignment to generate source-drain regions of the NMOS device and the PMOS device, removing the virtual grid, preparing a grid medium and wolfram (W) to form a grid electrode, conducting photoetching on a lead wire to form the bi-plycrystal strain SiGe SOI Bi CMOS integrated device and a circuit. Due to the preparation of the bi-plycrystal strain SiGe SOI Bi CMOS integrated circuit, the performances of a conventional analogue integrated circuit and a digital-analogue mixed integrated circuit are improved greatly.

Description

technical field [0001] The invention belongs to the technical field of semiconductor integrated circuits, and in particular relates to a double-polycrystalline, strained SiGe SOI BiCMOS integrated device and a preparation method. Background technique [0002] Semiconductor integrated circuit technology is the core technology of high-tech and information industries, and has become an important symbol to measure a country's scientific and technological level, comprehensive national strength and national defense strength, while microelectronic technology represented by integrated circuits is the key to semiconductor technology. The semiconductor industry is the basic industry of the country. The reason why it develops so fast is not only the huge contribution of technology itself to economic development, but also its wide applicability. [0003] Gordon Moore, one of the founders of Intel, proposed "Moore's Law" in 1965, which states that the number of transistors on an integrat...

AI Technical Summary

Problems solved by technology

For example, when the feature size is less than 100nm, due to problems such as tunneling leakage current and reliability, the traditional gate dielectric material SiO 2 Unable to meet the requirements of low power consumption; the short channel effect and narrow channel effect of nanometer devices are becoming more and more obvious, which seriously affects the device performance; traditional lithography technology cannot meet the shrinking lithography precision

Therefore, traditional Si-based process devices are increasingly difficult to meet the needs of design

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