P-i-N diode with low conduction voltage drop
A diode, low-conduction technology, applied in the field of power semiconductor devices, can solve the problems of increased power loss of diodes, and achieve the effects of reducing conduction voltage drop, reducing power consumption, and shortening reverse recovery time
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[0019] A diode with a low turn-on voltage drop, such as figure 1 As shown, it includes a cathode region 3, a cathode metal 10 located on the back of the cathode region 3, and a drift region 2 located on the front of the cathode region 3; the top of the drift region 2 has a P+ floating anode region 4, a trench gate structure and an anode structure; the The trench gate structure is sandwiched between the P+ floating anode region 4 and the anode structure, and is composed of a polysilicon gate electrode 5, a gate oxide layer 6 and a gate metal 8, wherein the gate metal 8 is located on the upper surface of the polysilicon gate electrode 5, and the gate oxide Layer 6 is located on the side and bottom of the polysilicon gate electrode 5; the bottom gate oxide layer 6 of the trench gate structure is in contact with the drift region 2, the left gate oxide layer 6 is in contact with the P+ floating anode region 4, and the right gate oxide layer 6 is in contact with the floating anode re...
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