Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Novel aqua regia system ITO (indium tin oxide) etching solution and its preparation method

An etching solution and water system technology, applied in the field of new aqua regia ITO etching solution and preparation, can solve the problems affecting the image accuracy and quality of high-density thin wires, and achieve the effects of reducing side etching, no residue and stable reaction.

Inactive Publication Date: 2012-10-17
JIANGYIN RUNMA ELECTRONICS MATERIAL
View PDF2 Cites 36 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In recent years, while people's demand for liquid crystal displays has been increasing, higher requirements have been put forward for product quality and screen accuracy, and the effect of etching can directly lead to the quality of the circuit board manufacturing process, affecting the quality of high-density thin wires. Image Accuracy and Quality

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Novel aqua regia system ITO (indium tin oxide) etching solution and its preparation method
  • Novel aqua regia system ITO (indium tin oxide) etching solution and its preparation method
  • Novel aqua regia system ITO (indium tin oxide) etching solution and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] The invention is a novel aqua regia-based ITO etching solution, which is uniformly mixed with six raw materials including hydrochloric acid, nitric acid, potassium chloride, potassium nitrate, surfactant and pure water.

[0034] Wherein, the weight percentages of the raw materials in the six can be respectively: 10 wt % hydrochloric acid, 1 wt % nitric acid, 0.1 wt % potassium nitrate, 0.1 wt % potassium chloride, 0.2 wt % sodium dodecylbenzenesulfonate, and the rest are Pure water; when the purity of raw materials changes, its ratio should be adjusted. Described hydrochloric acid, nitric acid concentration are respectively: nitric acid 61.5%. Hydrochloric acid 38%; The purity of potassium nitrate is higher than 99.5%, and the purity of potassium chloride is higher than 99.5%. The remaining impurity components in the potassium chloride and potassium nitrate raw materials are sodium chloride, water and a very small amount of impurities insoluble in the etching solution....

Embodiment 2

[0050] The invention is a novel aqua regia-based ITO etching solution, which is uniformly mixed with six raw materials including hydrochloric acid, nitric acid, potassium chloride, potassium nitrate, surfactant and pure water.

[0051] Wherein, the weight percentages of the raw materials in the six can be respectively: 30wt% hydrochloric acid, 10wt% nitric acid, 5wt% potassium nitrate, 5wt% potassium chloride, 3wt% alkylphenol polyoxyethylene ether, and the rest are pure water; After the purity of the raw material changes, its ratio should be adjusted. Described hydrochloric acid, nitric acid concentration are respectively: nitric acid 61.5%. Hydrochloric acid 38%; The purity of potassium nitrate is higher than 99.5%, and the purity of potassium chloride is higher than 99.5%. The remaining impurity components in the potassium chloride and potassium nitrate raw materials are sodium chloride, water and a very small amount of impurities insoluble in the etching solution.

[005...

Embodiment 3

[0061] The invention is a novel aqua regia-based ITO etching solution, which is uniformly mixed with six raw materials including hydrochloric acid, nitric acid, potassium chloride, potassium nitrate, surfactant and pure water.

[0062] Wherein, the weight percentages of the raw materials in the six can be respectively: 25wt% hydrochloric acid, 8wt% nitric acid, 3wt% potassium nitrate, 3wt% potassium chloride, 2wt% dodecylbenzenesulfonic acid, and all the other are pure water; After the purity of the raw material changes, its ratio should be adjusted. Described hydrochloric acid, nitric acid concentration are respectively: nitric acid 61.5%. Hydrochloric acid 38%; The purity of potassium nitrate is higher than 99.5%, and the purity of potassium chloride is higher than 99.5%. The remaining impurity components in the potassium chloride and potassium nitrate raw materials are sodium chloride, water and a very small amount of impurities insoluble in the etching solution.

[0063]...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Graininessaaaaaaaaaa
Apertureaaaaaaaaaa
Login to View More

Abstract

A novel aqua regia system ITO etching solution is characterized in that the etching solution comprises hydrochloric acid, nitric acid, pure water and additives, wherein the additives comprise a nitrate compound, a chlorine-based compound and a surfactant. A preparation method of the etching solution comprises the following steps: 1, adding a highly-acidic ion exchange resin to hydrochloric acid and nitric acid respectively, stirring to mix, filtering out the highly-acidic ion exchange resin, and controlling or removing impurity ions in the hydrochloric acid and the nitric acid; 2, weighing the hydrochloric acid, the nitric acid, the chlorine-based compound, the nitro-compound, the surfactant and the pure water according to a ratio; 3, dissolving the chlorine-based compound, the nitro-compound and the surfactant in water, and uniformly mixing the resulting solution with the nitric acid and the hydrochloric acid; and 4, letting the mixture obtained in step 3 in a filterer, and filtering to obtain the ITO etching solution. The etching solution has the advantages of stability, moderate etching efficiency, and good etching efficiency.

Description

technical field [0001] The invention relates to a composition for chemical etching of metal materials and a preparation process thereof, in particular to a composition for preparing a liquid crystal display / screen (LCD), a plasma display / screen (PDP), a field emitter / screen (FED), an organic A new type of aqua regia-based etchant used in the panel process for etching the indium tin oxide layer in industries such as light-emitting diode displays / screens (OLED / PLED) and its preparation method. Background technique [0002] Indium tin oxide (ITO) conductive film has many advantages such as low resistivity, good light transmission, good high temperature stability and simple preparation and graphic processing technology. It is an ideal transparent electrode material and is widely used in LCD, PDP , FED, OLED / PLED and other flat panel displays as transparent electrodes. [0003] In order to prepare the required electrode pattern, it is necessary to etch the ITO conductive film. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C09K13/06
Inventor 戈士勇
Owner JIANGYIN RUNMA ELECTRONICS MATERIAL
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com