A high-generation flat copper-titanium film acid etching solution

Abstract

The invention discloses an acid etching liquid for a copper-titanium film of an advanced flat. The acid etching liquid comprises the following components in percentage by mass: 1-10% of hydrogen peroxide, 0.1-8% of a hydrogen peroxide stabilizer, 1-10% of HNO3, 0.1-10% of metal corrosion inhibitors, 0.1-3% of a fluoride ion source, 0.1-3% of a quaternary ammonium hydroxide and the balance of water, wherein the metal corrosion inhibitors comprise an organic heterocyclic corrosion inhibitor and a component A corrosion inhibitor; and the component A corrosion inhibitor is at least one selected from cyclic imide and alkynol. The acid etching liquid disclosed by the invention has the advantages that the metal corrosion inhibitors comprising the organic heterocyclic corrosion inhibitor and the component A corrosion inhibitor which is at least one selected from cyclic imide and alkynol are adopted, so that one-step wet etching can be conducted on the copper-titanium film, the etching rate is moderate, and an angle formed between an etching surface of a cooper wiring end part and a baseplate at a lower layer ranges between 35 degrees and 50 degrees.

Description

technical field [0001] The invention relates to the technical field of etching liquid compositions, in particular to an acidic etching liquid for a high-generation flat copper-titanium film. Background technique [0002] At present, in the production process of high-generation flat-panel liquid crystal panels, copper-titanium etching solution is required to etch the copper-titanium double film in the preparation of copper process. The copper-titanium film etching solution systems known in the prior art include persulfate systems, hydrogen peroxide systems and fluoride oxidizing acid systems. [0003] The requirements of wet etching include the following five points: high processing precision; less etching residue; uniform etching; moderate etching speed; and the shape of the wiring section formed after etching is within the specified range. The more specific wiring profile requirement is that the angle (cone angle) formed by the etching surface at the end of the copper wiri...

AI Technical Summary

Problems solved by technology

[0004] CN103764874A and CN104911593A disclose the main components of the copper-titanium etching solution composition in the Chinese patent of persulfate, fluorine-containing compound, inorganic acid, cyclic amine compound and water, two kinds of schemes are based on persulfate, etch rate is fast and has after etching Good wiring shape, where the persulfate is ammonium persulfate, sodium persulfate and potassium persulfate, under the condition of no copper ion self-catalysis, the initial etching rate of the above etching solution is very slow, and then due to the copper ions in the etching solution increase, it is difficult to control the reaction speed in the later stage of etching; CN102834547A discloses a kind of etching solution for multilayer thin films including copper layer and titanium layer, which consists of hydrogen peroxide, nitric acid, fluorine ion source, azoles, quaternary Ammonium hydroxide and hydrogen peroxide stabilizers, azoles in the above components are single as metal corrosion inhibitor components, although the corrosion inhibition effect on copper is better, but the corrosion inhibition effect on titanium layer is general, so when etching titanium The etch speed is fast, and the shape of the wiring section formed after etching is not ideal, which is not suitable for the large size and high resolution requirements of high-generation flat panels

Images