Method for controlling sapphire seeding form of Kyropoulos method

A control method, sapphire technology, applied in chemical instruments and methods, using directions such as seed crystals remaining in the melt during growth, single crystal growth, etc., can solve the problems of no unified quantified standards and operating procedures, dependence, and unrealized seeding Automatic operation and other issues to achieve the effect of improving the seeding success rate and yield, and convenient operation

Inactive Publication Date: 2012-10-31
无锡鼎晶光电科技有限公司
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AI Technical Summary

Problems solved by technology

At present, all the Kyropoulos sapphire single crystal furnaces in the world have not realized the automatic operation of seeding. The entire seeding

Method used

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Embodiment Construction

[0013] The present invention will be further described below in conjunction with specific examples.

[0014] In order to improve the seeding success rate and form a unified quantification standard for the sapphire seeding morphology control, the sapphire seeding morphology control method of the present invention comprises the following steps:

[0015] a. Put the alumina raw material into the crucible of the single crystal furnace, install the seed crystal on the seed crystal rod, start the vacuum system and the heating system, and adjust the voltage of the heating system, so that the alumina raw material is completely melted and the convection on the surface of the melt is stable state, and make the deviation between the cooling center of the liquid surface and the geometric center of the crucible less than 20mm;

[0016] Generally, in the chemical material stage, first use a higher rate to increase the voltage, generally 1000mV / h, stop when it is close to the melting point of...

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Abstract

The invention discloses a method for controlling a sapphire seeding form of a Kyropoulos method. The method comprises that an aluminum oxide raw material is placed in a mono-crystal furnace crucible, seed crystal is installed on a seed crystal rod, a vacuum system and a heating system are started, the voltage of the heating system is adjusted, so that the aluminum oxide raw material is melted completely, a convectional stable state of a melt surface is achieved, and the deviation distance of a cold core of a liquid level and a geometric centre of the crucible is less than 20mm; the seed crystal position is adjusted slowly, then the seed crystal is close to the melt liquid surface gradually, simultaneously, the working voltage of the heating system is adjusted, and the melting of the seed crystal is avoided; preheating is performed for 30 minutes at a position of 2-5mm from the lower end portion of the seed crystal to the melt liquid surface; and the seed crystal is rotated through a traditional Czochralski process, the working voltage of the heating system is adjusted, the diameter of the end portion of crystallization is controlled to be less than 50mm and shouldering is started to be performed after the cold core is coated by the end portion of the crystallization. By the aid of the method, the form of the end portion of the crystallization can be well controlled, the operation is simple, and the success ratio and the yield of the seed crystal are improved.

Description

technical field [0001] The invention relates to a sapphire growth process, in particular to a kyropoulos sapphire seeding morphology control method, which belongs to the technical field of sapphire preparation. Background technique [0002] Sapphire crystal (commonly known as corundum) has high optical transmittance from vacuum, ultraviolet, visible, near-infrared to mid-infrared, high mechanical strength, and extremely low absorption coefficient. Sapphire crystal has high temperature resistance and good chemical stability. It is an excellent laser matrix material. It is a window material for various optical components and infrared military devices, satellite space technology, and high-intensity lasers. It is the most commonly used blue light semiconductor diode. Substrate materials for LEDs and diodes LD cover almost all substrate applications. At present, the growth methods of sapphire mainly include pulling method (Cz), guided mode method (EFG), Kyropoulos method (Ky), h...

Claims

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Application Information

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IPC IPC(8): C30B17/00C30B29/20
Inventor 贾宝申张向锋
Owner 无锡鼎晶光电科技有限公司
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