Single-side three-dimensional circuit chip upside-down-charging packaging-before-etching method and packaging structure thereof

Abstract

The invention relates to a single-side three-dimensional circuit chip upside-down-charging packaging-before-etching method, which comprises the following process steps: taking a metal baseplate; pre-plating copper on the surface of the metal baseplate; pasting light resistant films; removing part of the light resistant films on the front surface of the metal baseplate; electroplating an inert metal circuit layer; electroplating a metal circuit layer; pasting light resistant films; removing part of the light resistant films on the front surface of the baseplate; electroplating a metal circuit layer; removing the light resistant films on the surface of the metal baseplate; encapsulating; processing before metallization; electroplating a metal circuit layer; removing the light resistant films on the surface of the metal baseplate; mounting a chip and filling the bottom of the chip; encapsulating; chemically etching; removing the light resistant films on the surface of the metal baseplate; electroplating a metal circuit layer; encapsulating; cutting holes in the surface of plastic packaging materials; washing; mounting balls; and cutting finished products. The method and the structure disclosed by the invention has the benefits that the manufacture cost is lowered, the safety and reliability of the packaged body are improved, and the environment pollution is reduced, so that design and manufacture of high-density circuits are realized actually.

Description

technical field [0001] The invention relates to a single-sided three-dimensional circuit chip flip-chip, first-sealing and then-etching manufacturing method and its packaging structure, belonging to the technical field of semiconductor packaging. Background technique [0002] The manufacturing process flow of the traditional high-density substrate package structure is as follows: [0003] Step 1, see Figure 59 , take a substrate made of glass fiber material, [0004] Step two, see Figure 60 , opening holes at desired locations on the fiberglass substrate, [0005] Step three, see Figure 61 , coated with a layer of copper foil on the back of the glass fiber substrate, [0006] Step 4, see Figure 62 , fill the conductive material in the position where the glass fiber substrate is punched, [0007] Step five, see Figure 63 , coated with a layer of copper foil on the front of the glass fiber substrate, [0008] Step six, see Figure 64 , coated with a photoresist f...

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Problems solved by technology

[0019]3. Glass fiber itself is a kind of foaming material, so it is easy to absorb moisture and moisture due to the storage time and environment, which directly affects the reliability and safety ability or is the level of reliability;

[0020] 4. The surface of the glass fiber is covered with a copper foil metal layer thickness of about 50-100 μm, and the etching distance between the metal layer line and the line can only achieve an etching gap of 50-100 μm due to the characteristics of the etching factor (see Figure 71 , the best production capacity is that the etching gap is approximately equal to the thickness of the etched object), so it is impossible to truly design and manufacture high-density circuits;

[0022]6. Also because the entire substrate material is made of glass fiber, the thickness of the glass fiber layer is obviously increased by 100~150μm, and it cannot be really ultra-thin encapsulation;

[0023]7. Due to the large difference in material characteristics (expansion coefficient) of the traditional glass fiber plus copper foil technology, it is easy to cause stress deformation in the harsh environment process, directly Affects the accuracy of component loading and the adhesion and reliability of components and substrates

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