Single-side three-dimensional circuit chip upside-down-charging packaging-before-etching method and packaging structure thereof

A three-dimensional circuit, sealing first and etching later technology, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of great differences in material characteristics, stress deformation, and reliability levels that affect reliability and safety capabilities. Achieve the effects of not being easy to stress and deform, reducing environmental pollution, and improving safety
CN102760668AActive Publication Date: 2012-10-31JCET GROUP CO LTD
4 Cites 2 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
JCET GROUP CO LTD
Publication Date
2012-10-31

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention relates to a single-side three-dimensional circuit chip upside-down-charging packaging-before-etching method, which comprises the following process steps: taking a metal baseplate; pre-plating copper on the surface of the metal baseplate; pasting light resistant films; removing part of the light resistant films on the front surface of the metal baseplate; electroplating an inert metal circuit layer; electroplating a metal circuit layer; pasting light resistant films; removing part of the light resistant films on the front surface of the baseplate; electroplating a metal circuit layer; removing the light resistant films on the surface of the metal baseplate; encapsulating; processing before metallization; electroplating a metal circuit layer; removing the light resistant films on the surface of the metal baseplate; mounting a chip and filling the bottom of the chip; encapsulating; chemically etching; removing the light resistant films on the surface of the metal baseplate; electroplating a metal circuit layer; encapsulating; cutting holes in the surface of plastic packaging materials; washing; mounting balls; and cutting finished products. The method and the structure disclosed by the invention has the benefits that the manufacture cost is lowered, the safety and reliability of the packaged body are improved, and the environment pollution is reduced, so that design and manufacture of high-density circuits are realized actually.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to a single-sided three-dimensional circuit chip flip-chip, first-sealing and then-etching manufacturing method and its packaging structure, belonging to the technical field of semiconductor packaging. Background technique

[0002] The manufacturing process flow of the traditional high-density substrate package structure is as follows:

[0003] Step 1, see Figure 59 , take a substrate made of glass fiber material,

[0004] Step two, see Figure 60 , opening holes at desired locations on the fiberglass substrate,

[0005] Step three, see Figure 61 , coated with a layer of copper foil on the back of the glass fiber substrate,

[0006] Step 4, see Figure 62 , fill the conductive material in the position where the glass fiber substrate is punched,

[0007] Step five, see Figure 63 , coated with a layer of copper foil on the front of the glass fiber substrate,

[0008] Step six, see Figure 64 , coated with a photoresist f...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More