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Method and device for cutting seed crystal for pseudo-single crystal

A quasi-single crystal and seed crystal technology, which is applied in the field of cutting quasi-single crystal seed crystals, can solve the problems of kerf loss, waste of seed crystals, and high cost, so as to reduce production costs, reduce production processes, and reduce kerf loss Effect

Active Publication Date: 2014-07-23
LESHAN TOPRAYCELL
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  • Abstract
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Problems solved by technology

[0007] At present, diamond saw blades are mainly used for cutting seed crystals. Since the thickness of diamond saw blades is generally about 3 mm, if a 3 mm thick diamond saw blade is used to cut seed crystals, there will be a kerf loss of 3 mm, that is to say At least 3mm thick seed crystals will be wasted, the utilization rate of the seed crystals is low, and the seed crystals are expensive, and the low utilization rate of the seed crystals will greatly increase the production cost of quasi-single crystal silicon. Moreover, the use of diamond saw blades to cut the seed crystals , the cutting surface of the seed crystal is not smooth, and the cutting surface needs to be processed in a subsequent process, which is not only complicated in process but also high in cost

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  • Method and device for cutting seed crystal for pseudo-single crystal
  • Method and device for cutting seed crystal for pseudo-single crystal

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Embodiment Construction

[0025] In the method for cutting the seed crystal for quasi-single crystal, a metal wire is used to cut the seed crystal for quasi-single crystal, and the diameter of the metal wire is 0.1mm˜0.3mm. The metal wire is used to cut the quasi-single crystal seed crystal, and the diameter of the metal wire is 0.1mm-0.3mm, which can greatly reduce the kerf loss of the seed crystal, only 0.1mm-0.3mm kerf loss, which is comparable to that of the diamond saw Compared with the 3mm kerf loss of the wafer, the waste of the seed crystal is greatly reduced, the utilization rate of the seed crystal is improved, and the production cost of the quasi-single crystal is greatly reduced. The cutting surface is very smooth, and the cutting surface can be used directly without subsequent processing, which reduces the production process and further reduces the production cost. Usually, the smaller the diameter of the metal wire, the better, but if the diameter of the metal wire is too small, the metal...

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Abstract

The invention discloses a method and a device for cutting a seed crystal for a pseudo-single crystal, and by using the method and the device, the production cost is reduced. According to the method for cutting the seed crystal for the pseudo-single crystal, a metal wire is adopted to cut the seed crystal for the pseudo-single crystal, and the diameter of the metal wire is 0.1 to 0.3mm. The metal wire is adopted to cut the seed crystal for the pseudo-single crystal, and the diameter of the metal wire is 0.1mm to 0.3mm, so that the kerf lose of the seed crystal can be greatly reduced, namely, only 0.1mm to 0.3mm of the kerf lose is realized, and compared with the 3mm kerf lose of a diamond saw blade, the waste of the seed crystal is greatly reduced, the utilization ratio of the seed crystal is improved, and further the production cost of the pseudo-single crystal is greatly reduced; and moreover, the metal wire is used for cutting the seed crystal, the cut surface of the seed crystal is very smooth, subsequent process treatment of a cut surface is not required, and the seed crystal can be directly used, so that the production process steps are reduced, and the production cost is further reduced. The method and the device are suitable for popularization and application in the field of seed crystal cutting.

Description

technical field [0001] The invention relates to the field of seed crystal cutting, in particular to a method and a device for cutting a quasi-single crystal seed crystal. Background technique [0002] Quasi-single crystal is a process based on polycrystalline ingots. During crystal growth, a single crystal seed crystal is used in part to obtain polycrystalline silicon wafers that are similar in appearance and electrical properties to single crystals. This technology of forming monocrystalline silicon by ingot casting consumes only 5% more power than ordinary polycrystalline silicon, and the quality of monocrystalline silicon produced is close to that of Czochralski monocrystalline silicon. As we all know, in terms of the utilization rate of battery components, the silicon rod of Czochralski monocrystalline silicon is cylindrical, and the photovoltaic cells need to be cut off around, and the yield rate of the battery components is about 50%. Monocrystalline silicon ingots ar...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B28D5/04
Inventor 陈五奎李军陈辉徐文州冯加保耿荣军
Owner LESHAN TOPRAYCELL