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Power semiconductor module, electric power converter, and railway vehicle

A power conversion device and power semiconductor technology, which is applied to output power conversion devices, railway vehicles, and the conversion of AC power input to AC power output, etc. The effect of suppressing the rise in manufacturing costs

Inactive Publication Date: 2014-12-10
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, in conventional power semiconductor modules for parallel applications, it is difficult to select both switching elements and FWDs at the same time, and there is a problem that the yield for parallel applications is very high and the manufacturing cost becomes high.

Method used

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  • Power semiconductor module, electric power converter, and railway vehicle
  • Power semiconductor module, electric power converter, and railway vehicle
  • Power semiconductor module, electric power converter, and railway vehicle

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0023] First, the power conversion device according to Embodiment 1 of the present invention will be described. figure 1 It is a diagram showing a schematic functional configuration of the power conversion device according to Embodiment 1, and shows an example configuration of a power conversion device 10 mounted on a railway vehicle 1 . like figure 1 As shown, the power conversion device 10 is configured to include a converter (converter) 12 , a capacitor (condenser) 14 , and an inverter (inverter) 16 . The railway vehicle 1 is equipped with a transformer 6 disposed on the input end side of the power conversion device 10 and connected to the converter 12, and disposed on the output end side of the power conversion device 10 and connected to the inverter 16 to receive power from the power conversion device 10. 10 to drive the electric motor 18 of the vehicle. In addition, as the motor 18, an induction motor or a synchronous motor is preferable.

[0024] One end of the prima...

Embodiment approach 2

[0062] In Embodiment 1, an example in which SiC-FWD is used in one of the semiconductor elements constituting the FWD group in the power semiconductor module and Si-FWD in the other is shown, while in Embodiment 2, SiC-FWD is used as SiC-FWD. An example of a Schottky Barrier Diode (SiC-SBD).

[0063]SiC-SBD, due to its structural characteristics, has the characteristics of a voltage drop characteristic when the current is turned on and must have a positive temperature coefficient. Therefore, by connecting SiC-SBD with a positive temperature coefficient and Si-FWD with a negative temperature coefficient in series, it is possible to suppress thermal runaway due to manufacturing variations, reduce time and labor for component selection, and achieve design, Ease of manufacture.

[0064] In addition, when using SiC-SBD as SiC-FWD, for example, in figure 1 In the inverter 16, the on-switching loss during operation can be reduced. Therefore, if SiC-SBD is used, the cooler of the p...

Embodiment approach 3

[0081] In Embodiments 1 and 2, Si-IGBTs are used as transistor elements in switching elements (see figure 2 ), but in this embodiment, a structure in which two Si-IGBTs in parallel application are replaced by SiC-MOSFET (Metal Oxide Semiconductor Field Effect Transistor: Metal Oxide Semiconductor Field Effect Transistor) will be described. Embodiments 1 and 2 focus on the difference between the forward saturation voltage of one FWD and the forward saturation voltage of the other FWD in parallel applications. Although the degree is not as good as that of FWD, depending on the usage method, sometimes transistor elements require this kind of inter-element deviation.

[0082] Figure 8 It is a graph showing the temperature dependence of the current-voltage characteristic in the linear region of SiC-MOSFET. SiC-MOSFETs such as Figure 8 As shown, the voltage drop characteristic at the time of current conduction has a positive temperature coefficient, so they operate in a mutual...

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Abstract

A power semiconductor module includes an element pair 26 formed by connecting, in anti-parallel to each other, an IGBT 25 and an FWD group 24 in which an FWD 24a, a voltage drop characteristic of which during conduction has a negative temperature coefficient, and an FED 24b, a voltage drop characteristic of which during conduction has a positive temperature coefficient, are connected in series and an element pair 36 formed by connecting, in anti-parallel to each other, an IGBT 35 and an FWD group 34 in which a FWD 34a, a voltage drop characteristic of which during conduction has a negative temperature coefficient, and an FWD 34b, a voltage drop characteristic of which during conduction has a positive temperature coefficient, are connected in series. The element pairs 26 and 36 are connected in parallel.

Description

technical field [0001] The present invention relates to a power conversion device that can be applied to a railway vehicle, and specifically, to a power semiconductor module that can be mounted on such a power conversion device. Background technique [0002] Although not limited to modules for railway vehicles, for example, the following patent document 1 discloses a power module having two element pairs in which a transistor chip and a flywheel diode (Fly Wheel Diode: FWD) chip are connected in antiparallel. Semiconductor modules (refer to the same literature figure 1 , Image 6 ). [0003] In addition, in this kind of power semiconductor module, if the collector terminals, emitter terminals, and base terminals in each element pair are electrically connected, each element pair is connected in parallel, which can be used as an enlarged current capacity of power semiconductor modules used (often referred to as "parallel applications"). [0004] patent documents [0005] ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B60L9/22H02M5/458H03K17/12
CPCB60L2200/26H02M5/4585B60L9/22H03K17/127
Inventor 田中毅木之内伸一
Owner MITSUBISHI ELECTRIC CORP