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Manganese-doped aluminosilicate oxynitride luminescent film, preparation method and organic electroluminescent devices thereof

A technology of silicon aluminum oxynitride and luminescent thin film, which is applied in the direction of electric solid devices, electrical components, semiconductor devices, etc., can solve the problems of rare electroluminescent materials, and achieve the effect of low cost and simple preparation

Active Publication Date: 2012-11-21
OCEANS KING LIGHTING SCI&TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are still very few reports on the preparation of silicon aluminum oxynitride systems into thin film electroluminescent materials.

Method used

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  • Manganese-doped aluminosilicate oxynitride luminescent film, preparation method and organic electroluminescent devices thereof
  • Manganese-doped aluminosilicate oxynitride luminescent film, preparation method and organic electroluminescent devices thereof
  • Manganese-doped aluminosilicate oxynitride luminescent film, preparation method and organic electroluminescent devices thereof

Examples

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preparation example Construction

[0032] Step S1, preparation of ceramic target material: select Al 2 o 3 , MnO 2 and Si 3 N 4 The powder, after uniform mixing, is sintered in a muffle furnace at 900-1300°C (preferably 1250°C), cooled naturally at room temperature to obtain a target sample, and cut the target sample into a target with a size of Φ50×2mm ; Among them, Al 2 o 3 Accounting for 0.05-5% (mass percentage) of the total amount, MnO 2 Accounting for 0.01-1.5% (mass percentage) of the total amount, the balance is Si 3 N 4 ;

[0033] Step S2, put the target and substrate in step S1 into the vacuum chamber of the magnetron sputtering coating equipment, and use a mechanical pump and a molecular pump to pump the vacuum of the chamber to 1.0×10 -3 Pa~1.0×10 -5 Pa, preferably 5.0×10 -4 Pa;

[0034] Step S3, adjusting the magnetron sputtering coating process parameters as follows: the base-target distance is 45-95mm, preferably 60mm; the substrate temperature is 250°C-750°C, preferably 600°C; argon ...

Embodiment 1

[0039] 1. Select Al with a purity of 99.99% 2 o 3 , MnO 2 and Si 3 N 4 powder (among them, Al 2 o 3 , MnO 2 and Si 3 N 4 The mass percentages are 2.8%, 0.45%, and 96.75%). After uniform mixing, they are sintered in a muffle furnace at 1250°C, cooled naturally at room temperature, and the target samples are obtained, and the target samples are cut into Φ50 ×2mm target material;

[0040] 2. Put the target into the vacuum chamber of the magnetron sputtering coating equipment;

[0041] 3. Clean the glass substrate ultrasonically with acetone, absolute ethanol and deionized water successively, and perform oxygen plasma treatment on it, and then put it into the vacuum chamber of the magnetron sputtering coating equipment; among them, the target and the glass substrate The base target distance is set to 60mm;

[0042] 4. Use a mechanical pump and a molecular pump to pump the vacuum of the vacuum chamber of the magnetron sputtering coating equipment to 5.0×10 -4 Pa;

[00...

Embodiment 2

[0046] 1. Select Al with a purity of 99.99% 2 o 3 , MnO 2 and Si 3 N 4 powder (among them, Al 2 o 3 , MnO 2 and Si 3 N 4 The mass percentages are 0.05%, 1.5%, 98.45%), after uniform mixing, sintering treatment in a muffle furnace at 900°C, natural cooling at room temperature, to obtain target samples, and cut target samples into Φ50 ×2mm target;

[0047] 2. Put the target into the vacuum chamber of the magnetron sputtering coating equipment;

[0048] 3. Clean the glass substrate ultrasonically with acetone, absolute ethanol and deionized water successively, and perform oxygen plasma treatment on it, and then put it into the vacuum chamber of the magnetron sputtering coating equipment; among them, the target and the glass substrate The base target distance is set to 45mm;

[0049] 4. Use a mechanical pump and a molecular pump to pump the vacuum of the vacuum chamber of the magnetron sputtering coating equipment to 1.0×10 -3 Pa;

[0050] 5. Adjust the process parame...

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Abstract

The present invention belongs to the field of luminescent materials, and discloses a manganese-doped aluminosilicate oxynitride luminescent film, a preparation method and organic electroluminescent devices thereof. The manganese-doped aluminosilicate oxynitride luminescent film comprises the following chemical components, by mass, 0.05-5% of Al2O3, 0.01-1.5% of MnO2, and the balance of Si3N4. According to the present invention, magnetron sputtering equipment is adopted to prepare the manganese-doped aluminosilicate oxynitride luminescent film, wherein the film does not contain noble metal rare earth and other elements, and has characteristics of simple preparation and low cost. In addition, in a luminescence spectrum of the film of the present invention, luminescence in a blue light region can be achieved, and the whole blue light wavelength range of 490-550 nm are covered, such that blue light material deficiency in LED display and lighting can be overcome.

Description

technical field [0001] The invention relates to the field of optoelectronic devices, in particular to a manganese-doped silicon-aluminum-oxygen luminescent film and a preparation method thereof. The invention also relates to an organic electroluminescent device using the manganese-doped silicon-aluminum-oxygen luminescent thin film. Background technique [0002] Thin film electroluminescent display (TFELD) has attracted widespread attention and developed rapidly due to its advantages such as active light emission, full solid state, impact resistance, fast response, large viewing angle, wide application temperature, and simple process. The monochromatic TFELD with ZnS:Mn as the light-emitting layer has been developed and commercialized. At present, the research on color and even full-color TFELD and the development of multi-band luminescent materials are the development direction of this subject. [0003] Among the light-emitting system materials, silicon aluminum oxynitrid...

Claims

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Application Information

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IPC IPC(8): C23C14/06C23C14/35H01L51/50H01L51/52H01L51/54
Inventor 周明杰王平陈吉星黄辉
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
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