Structure for improving performance of passive device of power integrated circuit

Abstract

The invention discloses a structure for improving the performance of a passive device of a power integrated circuit. A metal plate is arranged in a chip of the power integrated circuit. The passive device is separated from an active device, the passive device is piled on a substrate and an area of the integrated circuit is reduced. One layer serving as the passive device is free from complex wiring, therefore, the thickness of a metal can be increased and the loss of the device can be reduced. A large metal plate can separate an electric field, and the passive and active devices do not affect each other. No electromagnetic field enters the substrate which is usually damaged, therefore, the energy loss can be reduced, and the performance of the passive device can be improved. The thickness of the chip is increased by pile-up on a power chip, so that the thickness of a silicon wafer can be reduced, and the silicon wafer is not bended, a radiating capacity of the chip is greatly improved. A source end is directly connected with the large metal plate, and the substrate is not used as a conductive layer, so that doping concentration of the substrate is reduced, and performances of the passive and active devices are improved.

Description

technical field [0001] The invention relates to a structure for improving the performance of a power integrated circuit passive device, which belongs to the field of microelectronic technology. Background technique [0002] The radio frequency and microwave fields require a large number of power amplifiers to obtain high output power to increase the transmission distance. At the same time, the power amplifiers are required to have high efficiency to reduce the cost of heat dissipation. Silicon-based LDMOS is widely used in radio frequency and microwave fields to realize power amplifiers because of its high power gain and high breakdown voltage. [0003] Power integrated circuits not only need active power devices, but also passive devices for input, output and inter-stage impedance matching. However, the doping concentration of the substrate of power integrated circuits is usually very high, and directly making passive devices such as inductors or capacitors on it will brin...

AI Technical Summary

Problems solved by technology

However, power integrated circuits usually have a high doping concentration on the substrate, and directly making passive devices such as inductors or capacitors on it will bring very large losses.

Therefore, current high-power amplifiers are usually based on discrete power devices, and a large number of passive devices such as inductors or capacitors are required outside the chip to achieve a high quality factor, which greatly increases costs and reduces reliability.

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