Gallium-nitride-base heterostructure field effect transistor with transverse p-n junction composite buffering layer structure

Abstract

The invention discloses a gallium-nitride-base heterostructure field effect transistor with allium -nitride-base heterostructure field effect transistor with transverse p-n junction composite buffering layer structure transverse p-n junction composite buffering layer structure, which belongs to the field of semiconductor devices. The gallium-nitride-base heterostructure field effect transistor structurally comprises a substrate, an aluminum nitride (AlN) nucleating layer, a gallium nitride (GaN) channel layer, an AlN insertion layer, a barrier layer, a source electrode, a drain electrode and a grid electrode, wherein the source electrode, the drain electrode and the grid electrode are formed on the barrier layer, the source electrode and the drain electrode are in ohmic contact with the barrier layer, the grid electrode is in Schottky contact with the barrier layer, a transverse p-n junction composite buffering layer is also arranged between the GaN channel layer and the AlN nucleating layer to inhibiting the transportation of carriers inside the buffering layer, the leaked current of the buffering layer is reduced, and the breakdown voltage and output power of the device can be improved.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a gallium nitride-based heterojunction field effect transistor with a lateral p-n junction composite buffer layer. Background technique [0002] Gallium nitride (GaN) is a representative of the third-generation wide bandgap semiconductor material. Compared with the first-generation semiconductor material silicon (Si) and the second-generation semiconductor material gallium arsenide (GaAs), GaN has a large bandgap width, With the advantages of high breakdown electric field, high electron saturation velocity, high temperature resistance, corrosion resistance, and radiation resistance, it is an ideal material for the development of high-voltage, high-power power electronic devices. Moreover, gallium nitride-based heterojunction field effect transistor (GaN HFET) can obtain high output power due to its high breakdown electric field and electron saturation velocity, as well as hig...

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Problems solved by technology

The AlGaN / GaN or AlN / GaN multilayer composite structure introduces a superlattice band structure in the buffer layer. Compared with the buffer layer doping and the AlGaN back barrier structure, this structure can further inhibit the transport of electrons in the buffer layer. Improve the breakdown voltage of the device, but the lattice mismatch between AlGaN and AlN materials and GaN materials will also destroy the crystal structure of the buffer layer, introduce traps and polarization charges, and reduce device performance

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