Fully-integrated photoelectric conversion receiver based on standard CMOS (complementary metal-oxide-semiconductor transistor) process

Abstract

The invention relates to a fully-integrated photoelectric conversion receiver based on standard CMOS process. The fully-integrated photoelectric conversion receiver comprises a photoelectric detector, a trans-conductance amplifier, an equalizer, a multi-stage limiter, a DCOC (decentralized classic optimal control) processing circuit, an output buffer, a slope detector and an error amplifier, wherein the P end of the photoelectric detector is grounded, and the N end is connected with the input end of the trans-conductance amplifier; the trans-conductance amplifier is connected with the differential input end of the equalizer through a high-pass circuit; the output end of the equalizer is connected with the differential input end of the output buffer through the multi-stage limiter; and the differential input end of the input buffer is connected with the output end of the equalizer through the DCOC processing circuit. The fully-integrated photoelectric conversion receiver provided by the invention is adaptive to transmission with higher data rate, can suppress jitter and error rate, can realize self-adaptive regulation, and can be widely used in the field of communication technology.

Description

Technical field [0001] The invention belongs to the technical field of communication, and relates to a photoelectric conversion receiver, in particular to a fully integrated photoelectric conversion receiver based on a standard CMOS process. Background technique [0002] Nowadays, with the continuous improvement of the speed of various communication protocols, 10Gb / s will become the mainstream trend of wired interconnection development. Recently, some key circuit modules for 40Gb / s rate have also begun to emerge, while for single channel at least 100Gb / s or more It is an inevitable trend of development. However, with the continuous improvement of the speed, the development of the electrical interconnection itself is also limited by the channel transmission (high-frequency attenuation and interface reflection), which makes it difficult. At this time, the optical interconnection between chips is more attractive, and it is also an inevitable trend of development. [0003] Bec...

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Problems solved by technology

[0003] Because the optical interconnection between chips has the following advantages: no interface reflection, small channel attenuation, no binding inductance, no interface ESD, and easy multi-chip integration, but the current technology development also has the following unresolved problems: At present, silicon-based standard CMOS photodetectors cannot meet the two requirements of high intrinsic bandwidth and high responsivity required for high-speed optical communication at the same time. It is difficult to realize high-modulation optical transmitters through standard processes, and the transmission medium needs to be changed, etc.

[0005] Silicon-based standard CMOS process to achieve monolithic integration of optical receivers also faces some challenges and problems: the responsivity of photodetectors based on standard CMOS processes is insufficient, an

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