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Metal-oxide-semiconductor field effect transistor (MOSFET) and method for producing same

A technology for semiconductors and injection regions, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as not being able to meet threshold voltage requirements, reduce parasitic capacitance and contact resistance, and reduce leakage current , the effect of suppressing the short channel effect

Active Publication Date: 2015-03-25
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, the aforementioned SOI MOSFETs with grounded back gates are still unable to meet the threshold voltage requirements of the device in the case of ever-decreasing channel lengths.

Method used

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  • Metal-oxide-semiconductor field effect transistor (MOSFET) and method for producing same
  • Metal-oxide-semiconductor field effect transistor (MOSFET) and method for producing same
  • Metal-oxide-semiconductor field effect transistor (MOSFET) and method for producing same

Examples

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Embodiment Construction

[0025] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the various drawings, for the sake of clarity, various parts in the drawings are not drawn to scale.

[0026] In the following, many specific details of the present invention are described, such as device structures, materials, dimensions, processing techniques and techniques, for a clearer understanding of the present invention. However, the invention may be practiced without these specific details, as will be understood by those skilled in the art. Unless otherwise specified below, various parts in the semiconductor device may be composed of materials known to those skilled in the art.

[0027] In the present application, the term "semiconductor structure" refers to a semiconductor substrate formed after undergoing various steps of manufacturing a semiconductor device and all layers or regions that have been formed on the semiconductor substrate.

[00...

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PUM

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Abstract

Provided are an MOSFET and a manufacturing method thereof. The MOSFET comprises an SOI chip formed of a semiconductor substrate (11), an insulating layer (12) and a semiconductor layer (13); gate stack layers (15, 22) located on the semiconductor layer (13), a source region and a drain region located at two sides of the gate stack, a channel region located in the semiconductor layer (13) and sandwiched between the source region and the drain region, and a back gate (17) located in the semiconductor substrate (11). The back gate comprises a first to a third compensation injection regions. The first compensation injection region is located below the source region and the drain region, the second compensation injection region extends along a direction leaving the channel region and is adjacent to the first compensation injection region, and the third compensation injection region is located below the channel region and is adjacent to the first compensation injection region. The structure implements adjustment on the threshold voltage by changing the doping type of the back gate, and may reduce the parasitic capacitance and contact resistance related to the back gate.

Description

technical field [0001] The present invention relates to a MOSFET and a manufacturing method thereof, more particularly, to a MOSFET with a back gate and a manufacturing method thereof. Background technique [0002] An important development direction of integrated circuit technology is to scale down the size of metal-oxide-semiconductor field-effect transistors (MOSFETs) to improve integration and reduce manufacturing costs. However, it is well known that short-channel effects occur as the size of MOSFETs decreases. As the size of the MOSFET is scaled down, the effective length of the gate is reduced, so that the proportion of depletion layer charge that is actually controlled by the gate voltage is reduced, so that the threshold voltage decreases as the channel length decreases. [0003] In MOSFET, on the one hand, it is desired to increase the threshold voltage of the device to suppress the short channel effect, on the other hand, it may also be desirable to reduce the thr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/36H01L29/40H01L29/78H01L21/28H01L21/336
CPCH01L29/78648H01L21/2652H01L21/2658
Inventor 朱慧珑许淼梁擎擎
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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