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Automatic seeding technique for growing sapphire crystal by Kyropoulos method

A technology of sapphire crystal and foaming method, which is applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of high labor and restrict crystal output, and achieve the goal of increasing production scale, saving labor costs and reducing production costs. Effect

Active Publication Date: 2013-01-16
黄山东晶电子有限公司
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AI Technical Summary

Problems solved by technology

On the one hand, a mature seeding engineer needs a lot of labor, and more importantly, he can only complete the seeding work of at most two crystal furnaces per day, which seriously restricts the increase in crystal production.

Method used

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Experimental program
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Embodiment Construction

[0017] The implementation steps of the automatic seeding technology of kyropoulos grown sapphire of the present invention are as follows:

[0018] A. Chemical material: Fill the high-purity alumina raw material into the tungsten crucible, install the thermal field components of the sapphire crystal growth furnace in sequence, and the seed crystal is equipped with an automatic weighing system to confirm the insulation. Turn on the vacuum equipment to make the vacuum in the furnace reach 10-3Pa. Turn on the heating switch, start the material program, the power cabinet will melt the raw material according to the set program, after the raw material is melted, the voltage of the molten raw material will be maintained for one hour.

[0019] B. Stabilization: After the material is chemically charged, reduce the heating voltage by 100mv / h, and stop reducing the voltage when the liquid flow reaches a stable level.

[0020] C. Automatic seeding: the operation steps are that the rotatin...

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Abstract

The invention belongs to the field of growth technologies of sapphire single crystal and particularly relates to an automatic seeding technique for growing sapphire crystal by a Kyropoulos method. The automatic seeding technique for growing sapphire crystal by the Kyropoulos method is characterized in that a weighing mechanism is automatically zeroed first; weight change of seed crystal is automatically calculated by a program according to curves, if weight changes from 10g to 20g, ring pulling is performed automatically by the program, and if not, the program automatically regulates voltage to enable the weight change to meet the requirements; and change rate in crystal weight is automatically calculated during weighing in ring pulling, the program automatically regulates the voltage and continuously calculates the change rate, seeding is completed till the change rate in crystal weight is controlled in the range of 0.1-0.5, and growth phase starts automatically. The number of seeding in a furnace is no longer limited by the number of seeding engineers by using the seeding technique to grow the sapphire crystal, production scale can be increased quickly, mass labor cost is saved, and production cost is reduced greatly.

Description

technical field [0001] The invention belongs to the technical field of sapphire single crystal (alumina single crystal) growth, and in particular relates to an automatic crystal seeding technology for growing sapphire crystal by a Kyropoulos method. Background technique [0002] The composition of sapphire is aluminum oxide (Al 2 o 3 ), which is composed of three oxygen atoms and two aluminum atoms combined by covalent bonds, and its crystal structure is a hexagonal lattice structure. It is often used in a-Plane, c-Plane and r-Plane. Due to the wide optical transmission band of sapphire, it has good light transmission from near ultraviolet (190nm) to mid-infrared. Therefore, it is widely used in optical components, infrared devices, high-strength laser lens materials and photomask materials. It has the characteristics of high sound velocity, high temperature resistance, corrosion resistance, high hardness, high light transmission, and high melting point (2045 ° C). A mat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/00C30B29/20
Inventor 承刚李京波李庆跃李凯汪林望池旭明夏建白
Owner 黄山东晶电子有限公司
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