Anti-interference and overvoltage, overcurrent protection chip component and its manufacturing method
An overcurrent protection, chip technology, applied in the direction of overvoltage protection resistors, resistance manufacturing, electrical components, etc., can solve problems such as fire, neglect of control circuit short circuit protection, and difficulty in selecting matching filter components
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Embodiment 1
[0073] The preparation method of the above-mentioned anti-interference and overvoltage and overcurrent protection chip component includes the following steps:
[0074] 1. Put TiO 2 , SrCO 3 、BaCO 3 , CaCO 3 , CuO, Nb 2 o 5 、La 2 o 3 and MnCO 3 Mix together and ball mill and dry to make porcelain powder for making strontium titanate ceramic substrate. Among them, the porcelain powder for manufacturing the strontium titanate ceramic substrate is respectively: 30% TiO by mass fraction 2 , 32% SrCO 3 , 16% BaCO 3 , 20% CaCO 3 , 0.5% CuO, 0.5% Nb 2 o 5 , 0.1% La 2 o 3 , 0.9% MnCO 3 . Then dry-press the porcelain powder for manufacturing the strontium titanate ceramic substrate to make a green sheet.
[0075] 2. Dry the blank at 800°C±10°C for 30±2 hours.
[0076] 3. Under the protection of an atmosphere with a mass ratio of hydrogen and nitrogen of 0.5 to 8, the semiconductor ceramic substrate is sintered at a sintering temperature of 1260°C±10°C.
[0077] 4. He...
Embodiment 2
[0092] The preparation method of the above-mentioned anti-interference and overvoltage and overcurrent protection chip component includes the following steps:
[0093] 1. Put TiO 2 , SrCO 3 、BaCO 3 , CaCO 3 , CuO, Nb 2 o 5 、La 2 o 3 and MnCO 3 Mix together and ball mill and dry to make porcelain powder for making strontium titanate ceramic substrate. Among them, the porcelain powder for manufacturing the strontium titanate ceramic substrate is respectively: 42% TiO by mass fraction 2 , 18.4% SrCO 3 , 20% BaCO 3 , 18% CaCO 3 , 0.3% CuO, 0.1% Nb 2 o 5 , 0.2% La 2 o 3 , 1.0% MnCO 3 . Then dry-press the porcelain powder for manufacturing the strontium titanate ceramic substrate to make a green sheet.
[0094] 2. Dry the green sheet at 1000°C±10°C for 25±2 hours.
[0095] 3. Under the protection of an atmosphere with a mass ratio of hydrogen and nitrogen of 0.65 to 9, the semiconductor ceramic substrate is sintered at a sintering temperature of 1260°C±10°C.
[0...
Embodiment 3
[0111] The preparation method of the above-mentioned anti-interference and overvoltage and overcurrent protection chip component includes the following steps:
[0112] 1. Put TiO 2 , SrCO 3 、BaCO 3 , CaCO 3 , CuO, Nb 2 o 5 , La 2 o 3 and MnCO 3 Mix together and ball mill and dry to make porcelain powder for making strontium titanate ceramic substrate. Among them, the ceramic powder for manufacturing the strontium titanate ceramic substrate is respectively: 55% TiO by mass fraction 2 , 16% SrCO 3 , 12% BaCO 3 , 16% CaCO 3 , 0.4% CuO, 0.2% Nb 2 o 5 , 0.1% La 2 o 3 , 0.3% MnCO 3 . Then dry-press the porcelain powder for manufacturing the strontium titanate ceramic substrate to make a green sheet.
[0113] 2. Dry the green sheet at 1200°C±10°C for 20±2 hours.
[0114] 3. Under the protection of an atmosphere with a mass ratio of hydrogen and nitrogen of 0.8 to 10, the semiconductor ceramic substrate is sintered at a sintering temperature of 1260°C±10°C.
[0115...
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