Epitaxial structure for improving luminous efficiency and preparation method thereof

A technology of epitaxial structure and luminous efficiency, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of uneven distribution of carriers, reduced luminous efficiency of quantum wells, and huge built-in electric field, etc., to improve luminous efficiency, Optimize concentration distribution and reduce stress effect

Active Publication Date: 2013-02-06
宁波安芯美半导体有限公司
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Problems solved by technology

[0006] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide an epitaxial structure and a preparation method thereof for improvi

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  • Epitaxial structure for improving luminous efficiency and preparation method thereof
  • Epitaxial structure for improving luminous efficiency and preparation method thereof

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Embodiment Construction

[0043] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0044] see Figure 1 to Figure 2 shown. It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be change...

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Abstract

The invention provides an epitaxial structure for improving luminous efficiency. The epitaxial structure for improving the luminous efficiency sequentially comprises a substrate, a first GaN (Gallium Nitride) buffer layer, a second GaN buffer layer, an N-type GaN layer, a multi-quantum well (MQW) structure, a light-emitting layer multi-quantum well structure, a p-type GaN layer, a p-type AlGaN (aluminium gallium nitride) layer, a p-type GaN layer and a p-type contact layer from the bottom up, wherein the multi-quantum well structure consists of n layers of InxGa1-XN/GaN multi-quantum wells; the widths, the depths and the barrier heights of the n layers of the multi-quantum wells increase layer by layer; the barrier widths of the n layers of the multi-quantum wells decrease layer by layer; the well widths increasing layer by layer and the barrier widths decreasing layer by layer form regular correspondence; and n is an integer in a range of 2-12. A preparation method of the epitaxial structure for improving the luminous efficiency can optimize concentration distribution of electrons, reduce stresses generated in growth processes of multi-quantum wells, reduce a quantum confined stark effect (QCSE) and improve the luminous efficiency of the multi-quantum wells.

Description

technical field [0001] The invention belongs to the technical field of preparation of gallium nitride-based materials, in particular to a method for improving the luminous efficiency of a gallium nitride-based light-emitting diode with multiple quantum wells. Background technique [0002] Group III nitrides represented by gallium nitride are wide-bandgap semiconductor materials with direct bandgap, which have high electron drift saturation velocity, good thermal conductivity, radiation resistance and high temperature resistance, and good chemical stability and physical properties. stability. Its ternary alloy indium gallium nitride (InGaN) band gap is continuously adjustable from 0.7eV indium nitrogen (InN) to 3.4 eV gallium nitride (GaN), and the emission wavelength covers the entire region of visible light and near ultraviolet light. Light-emitting diodes with InGaN / GaN multiple quantum wells as the active layer have remarkable features such as high efficiency, environmen...

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Application Information

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IPC IPC(8): H01L33/02H01L33/06
Inventor 郭丽彬王耀国钟伊泰
Owner 宁波安芯美半导体有限公司
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