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Three-dimensional vacuum sensor and manufacturing method thereof

A technology of a vacuum sensor and a manufacturing method, which is applied in the fields of vacuum technology and micro-electromechanical systems, can solve problems such as a large distance from a heater to a substrate, low measurement accuracy, and narrow measurement range, and achieve an increase in the upper limit of pressure measurement, sensitivity, and Yield Effect

Active Publication Date: 2013-02-13
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a three-dimensional vacuum sensor and its preparation method, which are used to solve the problems of low yield, excessive distance between the heater and the substrate, narrow measurement range and The problem of low measurement accuracy

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  • Three-dimensional vacuum sensor and manufacturing method thereof

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Embodiment 1

[0070] As shown in the figure, the present invention provides a method for preparing a three-dimensional vacuum sensor, the method comprising the following steps:

[0071] S1: if Figure 1a As shown, a semiconductor substrate is provided, and the semiconductor substrate can be an SOI substrate, or a common silicon wafer, and the common silicon substrate 10 is tentatively selected in this embodiment. A first silicon oxide layer 11 is prepared as a first dielectric layer on the silicon substrate 10 by a thermal oxidation process, and then a polysilicon layer 12 is deposited on the first silicon oxide layer 11 by an LPCVD process; then ion implantation is used The polysilicon layer 12 is doped by the process to make it conductive as the first conductive layer. The doped ions can be N-type or P-type ions. For example, the commonly used dopants for N-type doping are phosphorus, arsenic, etc., P The commonly used dopant for type doping is boron, indium, gallium, aluminum, or boron ...

Embodiment 2

[0089] like figure 2 As shown, the present embodiment provides a structure of a three-dimensional vacuum sensor, at least comprising: a semiconductor substrate 1', a first support film 2', a micro heater 3', a second support film 4', a thermopile (not shown ) and cover plate 6′.

[0090] The semiconductor substrate 1' has a groove 10', and the semiconductor substrate 1' can be a common silicon substrate or an SOI substrate; the first supporting film 2' wraps the micro heater 3', and with the side wall of the periphery of the groove 10' as a support, it is suspended above the groove 10'; the first supporting film 2' is a composite film, and the first supporting film 2' in this embodiment is A composite film with a sandwich structure comprising the first silicon oxide layer 20', the first silicon nitride layer 21', and the second silicon oxide layer 22' in sequence from bottom to top. better control. But it is not limited thereto. In other embodiments, the first support film...

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Abstract

The invention provides a three-dimensional vacuum sensor and a manufacturing method of the three-dimensional vacuum sensor. A thermo-electric pile and a heater manufactured by adopting the method are located on different planes, and the thermo-electric pile is arranged on the heater, thus the miniaturization of the thermo-electric vacuum sensor can be further implemented. The shorter vertical distance between the micro heater to a substrate can be obtained by adopting a dry etching release structure through controlling the etching opening and the etching time, the pressure measurement upper limit of a heat conducting vacuum gauge can be improved, the problem of adhesion of a structural layer and the substrate can be avoided, and the rate of finished production of the devices can be improved. Due to the additional arrangement of a silicon cover plate, the thermal conductivity of the gas can be enhanced, and the sensitivity of the heat conducting vacuum gauge on the higher gas pressure end can be improved. In addition, the materials of the semiconductor substrate, the thermo-electric pile and the micro-heater and the preparation technology adopted in the invention are commonly used in the semiconductor process and can be easily compatible with the existing CMOS (complementary metal oxide semiconductor) process.

Description

technical field [0001] The invention relates to a sensor and a preparation method thereof, in particular to a three-dimensional heat conduction vacuum sensor and a preparation method thereof, belonging to the technical fields of vacuum technology and micro-electromechanical systems. Background technique [0002] Vacuum measurement has a wide range of applications in the fields of industry, aerospace, and nuclear raw material purification. Traditional vacuum sensors are of various types and large in size, which limits their application in certain fields, especially in some tiny devices and instruments. . Combined with the development history and usage requirements of vacuum sensors, the current commonly used vacuum gauges have a tendency to develop in the direction of miniaturization, integration, systematization and intelligence. The rapid development of MEMS, especially the rapid development of micro-processing technology, has made the development of miniaturization of vac...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00B81B7/00G01L21/10
Inventor 熊斌孙晓徐德辉王跃林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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