Radio-frequency single-electron transistor scanning probe and application thereof

Abstract

The invention relates to a nanometer device and a nanometer machining technology, in particular to the structure of a radio-frequency single-electron transistor scanning probe and application thereof. The radio-frequency single-electron transistor scanning probe comprises an SOI (silicon on insulator) substrate of which one end has a needle-shaped lug boss, and a radio-frequency resonant circuit and a single-electron transistor integrated on the SOI substrate and matched with each other; and the single-electron transistor is integrated on the needle-shaped lug boss of the SOI. The invention further provides a manufacture method of the radio-frequency single-electron transistor scanning probe and a charge scanning imaging and oscillography and atomic power showing imaging system manufactured by the radio-frequency single-electron transistor scanning probe. The system is high in sensitivity, high in speed and high in spatial resolution, can form into the distribution morphology and the geometric morphology of the charge by means of low-temperature three-dimensional scanning, and can detect the electric potential and the dynamic change of the electric potential at any one point in the nanometer device or circuit at fixed points.

Description

technical field [0001] The invention relates to a nano device and a nano processing technology, especially a technology for making a scanning probe with an integrated radio frequency single electron transistor, which can also be applied to charge scanning imaging, oscillometric and atomic force imaging systems. Background technique [0002] Single-electron transistors based on the Coulomb blocking effect and single-electron tunneling effect have extremely high sensitivity to small charge changes in their neighborhoods at the micro-nano scale. The core of single-electron transistors sensitive to charges is quantum dots or Coulomb islands with a scale of only a few to tens of nanometers. The quantum dots are coupled to the source and drain electrodes through the tunneling barrier, and the control gate and the Coulomb islands are coupled through capacitive coupling. Single-electron transistors can be used for fixed-point high-sensitivity charge detection at the micro-nano scale...

AI Technical Summary

Problems solved by technology

The charge sensitivity of the above-mentioned single-electron transistor probe has reached 10 -5 e / Hz 0.5 charge sensitivity; but the speed is lower than 100kHz, and it is not yet possible to effectively test the charge signal on the order of microseconds and nanoseconds; based on Al / Al 2 o 3 type single-electron transistor, the operating temperature is usually below 300mK; there is no control gate on the probe, and the operating point of the transistor is set by the circuit under test, which greatly affects each other

The above-mentioned radio frequency single-electron transistor has the characteristics of high speed and high sensitivity, and the bandwidth is as high as 100MHz; but because it is fixed on the substrate, it cannot be used for spatial scanning; the Al / Al based 2 o 3 Or GaAs / AlGaAs single-electron transistors, the operating temperature is usually below 300mK

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