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Negative photoresist developing solution and application thereof

A technology of negative photoresist and developing solution, applied in the field of developing solution, can solve the problems of conductive short circuit, unfavorable influence of transistor control switch, difficult to be cleaned, etc., to achieve better permeability, elimination of unfavorable influence, and increase of developing rate. Effect

Inactive Publication Date: 2013-02-13
HANGZHOU GREENDA CHEM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Because potassium hydroxide contains a large amount of potassium ions and sodium ions, this type of developer contains a large amount of metal ions and is not easy to be cleaned, and then remains on the color filter substrate to form impurities
In the application environment of thinner line width and denser lines, residual metal ion impurities will form a conductive short circuit in a small amount, which will adversely affect the transistor control switch in the TFT pixel

Method used

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  • Negative photoresist developing solution and application thereof
  • Negative photoresist developing solution and application thereof
  • Negative photoresist developing solution and application thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0030] Take 240g of TMAH aqueous solution with a mass concentration of 25%, take 250g of a TEAH aqueous solution with a mass concentration of 20%, add them to a 1L volumetric flask, and then add 1L of high-purity water to obtain an aqueous solution with a concentration of 6%TMAH+5%TEAH. When in use, dilute it into a 100L developer temperature-controlled tank, fill the tank with high-purity water whose temperature is controlled at 23°C±1°C, stir evenly, and prepare an aqueous solution with a concentration of 0.06%TMAH+0.05%TEAH. In addition, G glue with a film thickness of 2.0 μm has been prepared and exposed, and the exposure pattern is a rectangle with a width of about 800 μm. Transfer the G glue glass substrate to the developing tank, and develop it by spraying. The developing time is 20s, and the liquid temperature is always controlled at 23°C±1°C. After developing, water washing, blow drying and post-baking are carried out to obtain a developed photoresist substrate. Subs...

Embodiment 2

[0032]Take 400g of TMAH aqueous solution with a mass concentration of 25%, and at the same time take 50g of alcohol ether ammonium phosphate, add it to a 1L volumetric flask, and then add 1L of high-purity water to obtain an aqueous solution with a concentration of 10%TMAH+5% alcohol ether ammonium phosphate. When in use, dilute it into a 100L developer temperature-controlled tank, fill the tank with high-purity water whose temperature is controlled at 23°C±1°C, stir evenly, and prepare an aqueous solution with a concentration of 0.10% TMAH+0.05% alcohol ether ammonium phosphate. In addition, R glue with a film thickness of 2.0 μm has been prepared and exposed, and the exposure pattern is a rectangle with a width of about 800 μm. Transfer the R glue glass substrate to the developing tank, and develop it by spraying. The developing time is 25s, and the liquid temperature is always controlled at 23°C±1°C. After developing, water washing, blow drying and post-baking are carried o...

Embodiment 3

[0034] Take 240g of TMAH aqueous solution with a mass concentration of 25%, and another 200g of TMAC aqueous solution with a mass concentration of 20%, and at the same time take 50g of phenol ether sulfate ester salt, add it to a 1L volumetric flask, and then add 1L of high-purity water to obtain 6%TMAH+4 %TMAC+5% aqueous solution of phenol ether sulfate salt concentration. When in use, dilute it into a 100L developer temperature-controlled tank, fill the tank with high-purity water whose temperature is controlled at 23°C±1°C, stir evenly and configure it to a concentration of 0.06%TMAH+0.04%TMAC+0.05%phenol ether sulfate aqueous solution. In addition, G glue with a film thickness of 2.0 μm has been prepared and exposed, and the exposure pattern is a rectangle with a width of about 800 μm. Transfer the G glue glass substrate to the developing tank, and develop it by spraying. The developing time is 25s, and the liquid temperature is always controlled at 23°C±1°C. After devel...

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Abstract

The invention relates to a negative photoresist developing solution and application of the developing solution. The developing solution is an aqueous solution consisting of an alkaline matter and an anionic surfactant. The alkaline matter is an organic quaternary ammonium compound free of a metal ion, such as TMAH (tetramethyl ammonium hydroxide) and / or TMAC (tetramethyl ammonium carbonate (bicarbonate)), and the anionic surfactant can be alcohol ether carboxylate, alcohol ether sulfonate, phenolic ether sulfate, alcohol ether phosphate, and the like. The metal ion content of the developing solution is low, the cost is low, the service life of the solution is long, and the developing solution is applicable to developing of color-filter negative photoresist in the TFT (thin film transistor)-LCD (liquid crystal display) industry, particularly processing of new techniques such as a high-resolution display screen and a COA (color-filter on array).

Description

technical field [0001] The invention relates to a color film photoresist developing process in TFT-LCD, in particular to a developing solution used in the manufacture of color films of high-end products such as high-resolution display screens and Color-filter On Array (COA). Background technique [0002] TFT-LCD (Thin Film Transistor Liquid Crystal Display) process can be subdivided into array, color film, box and module process. Generally speaking, the TFT substrate is first produced by the array factory, the color filter substrate is produced by the color film factory, and then the two substrates are bonded and injected into the liquid crystal by the box factory, and finally assembled into a display device by the module factory. The key to color display lies in the color film factory. [0003] The process included in the color film factory includes the formation of BM (black matrix), R (red), G (green), B (blue) pixels, and PS (pad). TFT-LCD controls the liquid crystal s...

Claims

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Application Information

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IPC IPC(8): G03F7/32G03F7/30
Inventor 谭智敏徐雅玲黄源严兵华
Owner HANGZHOU GREENDA CHEM
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