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X8R-type capacitor ceramic material with high dielectric constant and preparation method thereof

A capacitor ceramic, high dielectric constant technology, applied in the field of ceramic materials, can solve the problem that ceramic materials are not in a highly mature stage, and achieve the effect of high dielectric constant and improved temperature stability

Active Publication Date: 2014-05-14
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The research on ceramic materials that meet the X8R conditions has not yet reached a highly mature stage. In order to broaden the wider application temperature, the BaTiO 3 The Curie temperature of the base ceramic material, and ensure the temperature stability in the low temperature region, so as to obtain the BaTiO that meets the X8R standard 3 Ceramic-based ceramics are still a difficult problem at this stage of research

Method used

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  • X8R-type capacitor ceramic material with high dielectric constant and preparation method thereof
  • X8R-type capacitor ceramic material with high dielectric constant and preparation method thereof
  • X8R-type capacitor ceramic material with high dielectric constant and preparation method thereof

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Embodiment 1

[0035] A high dielectric constant X8R type capacitor ceramic material is composed of a matrix component and a doping component, and the chemical formula of the matrix component is aBaTiO 3 -bNa 0.5 Bi 0.5 TiO 3 , a=0.92, b=0.08, the chemical formula of the doping component is cYb 2 o 3 -dMgO, c=0.015, d=0.005, the chemical expression of the high dielectric constant X8R capacitor ceramic material is 0.92BaTiO 3 -0.08Na 0.5 Bi 0.5 TiO 3 -0.015Yb 2 o 3 -0.005MgO.

[0036] The preparation method of above-mentioned high dielectric constant X8R type capacitor ceramic material, it comprises the following steps:

[0037] (1) According to the chemical expression of high dielectric constant X8R capacitor ceramic material 0.92BaTiO 3 -0.08Na 0.5 Bi 0.5 TiO 3 -0.015Yb 2 o 3 The stoichiometric ratio of metal atoms in -0.005MgO weighs the matrix component raw material BaTiO 3 、 Bi 2 o 3 、Na 2 CO 3 、TiO 2 and doping component raw material Yb 2 o 3 , MgO, standby;

[...

Embodiment 2

[0043] A high dielectric constant X8R type capacitor ceramic material is composed of a matrix component and a doping component, and the chemical formula of the matrix component is aBaTiO 3 -bNa 0.5 Bi 0.5 TiO 3 , a=0.92, b=0.08, the chemical formula of the doping component is cYb 2 o 3 -dMgO, c=0.015, d=0.01, the chemical expression of the high dielectric constant X8R capacitor ceramic material is 0.92BaTiO 3 -0.08Na 0.5 Bi 0.5 TiO 3 -0.015Yb 2 o 3 -0.01MgO.

[0044] The preparation method of above-mentioned high dielectric constant X8R type capacitor ceramic material, it comprises the following steps:

[0045] (1) According to the chemical expression of high dielectric constant X8R capacitor ceramic material 0.92BaTiO 3 -0.08Na 0.5 Bi 0.5 TiO 3 -0.015Yb 2 o 3 The stoichiometric ratio of metal atoms in -0.01MgO weighs the matrix component raw material BaTiO 3 、 Bi 2 o 3 、Na 2 CO 3 、TiO 2 and doping component raw material Yb 2 o 3 , MgO, standby;

[004...

Embodiment 3

[0051] A high dielectric constant X8R type capacitor ceramic material is composed of a matrix component and a doping component, and the chemical formula of the matrix component is aBaTiO 3 -bNa 0.5 Bi 0.5 TiO 3 , a=0.9, b=0.1, the chemical formula of the doping component is cYb 2 o 3 -dMgO, c=0.015, d=0.005, the chemical expression of the high dielectric constant X8R type capacitor ceramic material is 0.9BaTiO 3 -0.1Na 0.5 Bi 0.5 TiO 3 -0.015Yb 2 o 3 -0.005MgO.

[0052] The preparation method of above-mentioned high dielectric constant X8R type capacitor ceramic material, it comprises the following steps:

[0053] (1) According to the chemical expression of high dielectric constant X8R capacitor ceramic material 0.9BaTiO 3 -0.1Na 0.5 Bi 0.5 TiO 3 -0.015Yb 2 o 3 The stoichiometric ratio of metal atoms in -0.005MgO weighs the matrix component raw material BaTiO 3 、 Bi 2 o 3 、Na 2 CO 3 、TiO 2 and doping component raw material Yb 2 o 3 , MgO, standby;

[0...

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Abstract

The invention discloses an X8R-type capacitor ceramic material with a high dielectric constant, which comprises a substrate component and a doping component; the chemical molecular formula of the substrate component is aBaTiO3-bNa0.5Bi0.5TiO3; the chemical molecular formula of the doping component is cYb2O3-dMgO; the chemical expression of the X8R-type capacitor ceramic material with a high dielectric constant is aBaTiO3-bNa0.5Bi0.5TiO3-cYb2O3-dMgO, wherein a=0.88-0.92, b=0.08-0.12, c=0.01-0.015, and d=0.004-0.012. The X8R-type capacitor ceramic material obtained in the invention meets a wide operating temperature range, good temperature stability, a high dielectric constant, and environment friendship for X8R-type multilayer ceramic capacitors.

Description

technical field [0001] The invention belongs to the ceramic material technology of electronic components, in particular to a high dielectric constant X8R type capacitor ceramic material and a preparation method thereof. Background technique [0002] Multilayer ceramic capacitors (MLCC) are an important electronic component in today's electronic systems, and are mainly used in circuits such as oscillation, coupling, and filtering in various electronic products. And it also has more and more widely used in aerospace electronic equipment, tank electronic equipment and other military electronic equipment. At present, the widely used MLCC dielectric ceramic research systems mainly include three types, namely, lead-based composite perovskite system, tungsten bronze structure system, and barium titanate system. Among them, X7R capacitors are mainly based on barium titanate system. But BaTiO 3 The Curie temperature is low (about 125°C), so it is difficult to meet the requirement o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/468C04B35/622
Inventor 刘韩星归冬云孙玥郝华曹明贺余志勇郭丽玲尧中华黄雪琛
Owner WUHAN UNIV OF TECH
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