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Preparation method for silicon nitride matrix

A technology of silicon nitride substrate and silicon source, which is applied in the field of preparation of silicon nitride substrate, can solve the problems of low performance of ceramic substrate, and achieve the effects of excellent mechanical properties, good deposition uniformity, and stable wave transmission performance

Active Publication Date: 2015-04-29
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In order to avoid the deficiencies of the prior art, the present invention proposes a method for preparing a silicon nitride substrate, which overcomes the prior art and prepares Si 3 N 4 The lack of high performance of the ceramic matrix facilitates the control of the composition, permeability, thickness and wave-transmitting properties of the prepared ceramic matrix

Method used

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  • Preparation method for silicon nitride matrix
  • Preparation method for silicon nitride matrix
  • Preparation method for silicon nitride matrix

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] (1) Select the 2-dimensional plain weave carbon cloth with the brand name T300, and cut the carbon cloth into a small sample with a plane size of 50mm×50mm as the base material;

[0028] (2) Hang the above base material on the supporting sample holder of the vacuum furnace, and the sample is in the center of the isothermal zone in the furnace;

[0029] (3) Prepare Si with uniform thickness on the substrate by CVD / CVI method 3 N 4 , the precursor is MTS-NH 3 -H 2 -Ar,H 2 Carrier gas and NH 3 The flow ratio is 5:3, H 2 The dilution ratio of the total amount and MTS is 10.2:1, the reaction temperature is 900°C, the holding time is 7 hours, and the pressure in the furnace is 400Pa.

Embodiment 2

[0031] (1) Select porous Si 3 N 4 The ceramic substrate is pre-processed according to the size of 22.86mm × 10.16mm × 2.2mm, and the surface of the formed substrate is ground and polished as the base material;

[0032] (2) Hang the above base material on the supporting sample holder of the vacuum furnace, and the sample is in the center of the isothermal zone in the furnace;

[0033] (3) Prepare Si with uniform thickness on the substrate by CVD / CVI method 3 N 4 , the precursor is MTS-NH 3 -H 2 -Ar,H 2 Carrier gas and NH 3 The flow ratio is 5:3, H 2 The total amount and the MTS dilution ratio are 8:1, the reaction temperature is 1200°C, the holding time is 7 hours, and the furnace pressure is 400Pa;

[0034] Si 3 N 4 -Si 3 N 4 Composite ceramics are tested for dielectric properties, and the test frequency is 8.2-12.4GHz.

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Abstract

The invention relates to a preparation method for a silicon nitride matrix, which is mainly used for the preparation of fiber toughening ceramic matrix composite materials and porous ceramic material matrixes. The preparation method comprises the following steps of depositing a silicon nitride matrix / coating on the inner side / surface of a substrate material by a chemical vapor infiltration / chemical vapor deposition technology; and adjusting the deposition velocity, the deposition thickness and the infiltration uniformity of a ceramic matrix by controlling process parameters. According to the preparation method, the prepared silicon nitride matrix has the characteristics of deep deposition and infiltration depth, good combination with the substrate, high performance and the like by means of the advantages of a chemical vapor infiltration / chemical vapor deposition process. Combined with the ware transmission property of the silicon nitride matrix, the preparation method has the advantage that a foundation of integration design of structures and functions of the continuous fiber toughening ceramic matrix composite material is laid.

Description

technical field [0001] The present invention relates to a method for preparing a silicon nitride substrate, a method for preparing a silicon nitride wave-transmissive ceramic substrate, and in particular to chemical vapor deposition / chemical vapor infiltration technology (hereinafter referred to as CVD / CVI) on substrate materials. Preparation method for in situ synthesis of silicon nitride ceramic substrates and coatings. Background technique [0002] Continuous fiber toughened ceramic matrix composites (CFCC) are composed of three structural units: fiber, matrix and interface phase. The synergy between them makes CFCC have high strength and toughness, and at the same time, it is not sensitive to cracks and does not occur catastrophically. damaged. The matrix materials of CFCC include glass, oxide and non-oxide ceramics. Among them, non-oxide ceramic substrates, such as silicon carbide (SiC) and silicon nitride (Si 3 N 4 ), has outstanding advantages such as low density,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/80C04B35/584C04B35/622
Inventor 张立同刘永胜叶昉刘晓菲殷小玮成来飞
Owner NORTHWESTERN POLYTECHNICAL UNIV