Piezoresistive electronic skin and preparation method thereof

Abstract

The invention provides piezoresistive electronic skin and a preparation method thereof. According to the piezoresistive electronic skin, carbon nano tube films are adopted to serve as conductive layers, polydimethylsiloxane, polyethylene terephthalate, polyvinyl alcohol, polyvinyl formal, polyethylene and other materials provided with micronano patterns serves as substrates, and therefore the substrate has the advantages of being high in flexibility, prone to bending and the like, is low in operating voltage, little in power, high in sensitivity, and short in response time. More importantly, the patterning flexible substrates are adopted to serve as a base body, and sensitivity of the electronic skin to external tiny applied force is greatly improved.

Description

technical field [0001] The invention relates to the field of sensors, in particular to a piezoresistive electronic skin and a preparation method thereof. Background technique [0002] Robots, as automation devices of artificial intelligence, are more and more integrated into the daily life of human beings, and perform related work instead of human beings in dangerous industries such as high temperature, high pressure, and explosive discharge. The current robot system has achieved many functions such as human vision, hearing and smell through the integration of various sensors. However, how to have a sensitive tactile function like humans has always been one of the challenging problems faced by robotic systems. The birth of electronic skin will bring great changes to the robot system, so that the robot can obtain more information from the external environment. [0003] Although since 2004, some research groups in Japan and the United States have reported electronic skin bas...

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Problems solved by technology

[0003] Although since 2004, some research groups in Japan and the United States have reported electronic skin based on organic field effect transistor type, capacitive type and piezoresistive type, but each has advantages and disadvantages, for example, complex processing technology and device structure, relatively Large driving voltage, low sensitivity, and the use of rigid silicon-based materials make the device non-transparent and non-flexible, which also limits the scope of use of the device.

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