High-efficiency crucible for polycrystal ingot casting and preparation method thereof

A polycrystalline ingot, high-efficiency technology, applied in the growth of polycrystalline materials, chemical instruments and methods, crystal growth, etc., can solve the problems of poor uniformity of crystal nucleus, low photoelectric conversion efficiency, uneven distribution of silicon wafers, etc. Achieve the effect of improving conversion efficiency and avoiding scrap

Active Publication Date: 2013-05-08
晶海洋半导体材料(东海)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the current quartz crucible for polycrystalline ingots, during the nucleation process of silicon crystals, the molten silicon material spontaneously nucleates and grows randomly, and the uniformity of the formed nu

Method used

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  • High-efficiency crucible for polycrystal ingot casting and preparation method thereof
  • High-efficiency crucible for polycrystal ingot casting and preparation method thereof

Examples

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Effect test

Embodiment 1

[0023] Such as figure 1 , 2 As shown, the high-efficiency crucible for polycrystalline ingot casting of the present invention includes a conventional quartz crucible 1, and the bottom of the quartz crucible 1 is uniformly inlaid with high-purity particles 2, and the high-purity particles 2 are silicon carbide particles with a particle size of 1.5 mm. The height of the high-purity particles 2 protruding from the bottom of the quartz crucible 1 is 1 mm, the distance between the high-purity particles 2 is 5 mm, and the high-purity particles 2 are arranged in a matrix.

[0024] The preparation method of the above-mentioned high-efficiency crucible for polycrystalline ingots includes the following steps: (1) making a quartz crucible 1 according to the existing technology; (2) selecting high-purity particles 2; (3) uniformly inlaying the high-purity particles 2 in the quartz In the quartz slurry at the bottom of the crucible 1; (4) The high-purity particles 2 are firmly fixed on th...

Embodiment 2

[0026] Such as figure 1 , 2 As shown, the high-efficiency crucible for polycrystalline ingot casting of the present invention includes a conventional quartz crucible 1, and the bottom of the quartz crucible 1 is uniformly inlaid with high-purity particles 2, and the high-purity particles 2 are quartz particles with a particle size of 2 mm. The height of the high-purity particles 2 protruding from the bottom of the quartz crucible 1 is 1 mm, the distance between the high-purity particles 2 is 5 mm, and the high-purity particles 2 are arranged in a matrix.

[0027] The preparation method of the above-mentioned high-efficiency crucible for polycrystalline ingots includes the following steps: (1) making a quartz crucible 1 according to the existing technology; (2) selecting high-purity particles 2; (3) uniformly inlaying the high-purity particles 2 in the quartz In the quartz slurry at the bottom of the crucible 1; (4) The high-purity particles 2 are firmly fixed on the bottom of...

Embodiment 3

[0029] Such as figure 1 , 2 As shown, the high-efficiency crucible for polycrystalline ingot casting of the present invention includes a conventional quartz crucible 1, and the bottom of the quartz crucible 1 is uniformly inlaid with high-purity particles 2, and the high-purity particles 2 are silicon particles with a particle size of 1.5 mm. The height of the high-purity particles 2 protruding from the bottom of the quartz crucible 1 is 1 mm, the distance between the high-purity particles 2 is 6 mm, and the high-purity particles 2 are arranged in a matrix.

[0030] The preparation method of the above-mentioned high-efficiency crucible for polycrystalline ingots includes the following steps: (1) making a quartz crucible 1 according to the existing technology; (2) selecting high-purity particles 2; (3) uniformly inlaying the high-purity particles 2 in the quartz In the quartz slurry at the bottom of the crucible 1; (4) The high-purity particles 2 are firmly fixed on the bottom...

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Abstract

The invention discloses a high-efficiency crucible for polycrystal ingot casting. The high-efficiency crucible comprises a conventional quartz crucible, wherein high-purity granules are uniformly inlaid at the bottom of the quartz crucible. The invention also discloses a preparation method of the high-efficiency crucible for the polycrystal ingot casting. Compared with the traditional quartz crucible, the high-efficiency crucible disclosed by the invention has the advantages that the high-purity granules are uniformly distributed at the bottom of the quartz crucible so that regularly-distributed fluctuated recesses and bulges are formed at the bottom of the quartz crucible, and the fluctuated recesses and bulges formed by the high-purity granules can guide crystal-shaped nucleuses to form uniform crystal nucleuses with moderate size, thereby being favorable to the growth quality of crystals at a later stage and easier to realize the increase of the conversion efficiency of silicon slices; after the high-purity granules are inlaid at the bottom of the quartz crucible, the high-purity granules are firmly fixed on the quartz crucible without being desquamated after being used, thereby being favorable to the demoulding of the quartz crucible after ingot casting and preventing the silicon materials positioned at the bottom from being scraped because the high-purity granules enter a silicon ingot; and the high-purity granules are uniformly arrayed in a matrix shape at the bottom of the quartz crucible, thereby being favorable to forming the uniformly-distributed crystal nucleuses with moderate sizes and favorable to enhancing the growth quality of the crystals at the later stage.

Description

technical field [0001] The invention relates to a quartz crucible used for casting polycrystalline silicon ingots, and also relates to a preparation method for the quartz crucible used for casting polycrystalline silicon ingots. Background technique [0002] Solar cells are divided into several manufacturing stages: silicon wafers, solar cells, and components. During the manufacturing process of polycrystalline silicon wafers, quartz crucibles are required for casting polycrystalline silicon ingots. The polycrystalline ingot adopts the method of directional solidification. After the silicon material is put into the quartz crucible and put into the furnace, it usually includes heating, melting, crystal growth, annealing, cooling and other processes. After the silicon material is heated and melted into a liquid state, the polycrystalline silicon ingot is cast into a polycrystalline silicon ingot through process control to cause nucleation and growth from the bottom. [0003] ...

Claims

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Application Information

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IPC IPC(8): C30B28/06C30B29/06
Inventor 颜颉颃习海平罗建明高源石宗杰张欣
Owner 晶海洋半导体材料(东海)有限公司
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