High-efficiency crucible for polycrystal ingot casting and preparation method thereof
A polycrystalline ingot, high-efficiency technology, applied in the growth of polycrystalline materials, chemical instruments and methods, crystal growth, etc., can solve the problems of poor uniformity of crystal nucleus, low photoelectric conversion efficiency, uneven distribution of silicon wafers, etc. Achieve the effect of improving conversion efficiency and avoiding scrap
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Embodiment 1
[0023] Such as figure 1 , 2 As shown, the high-efficiency crucible for polycrystalline ingot casting of the present invention includes a conventional quartz crucible 1, and the bottom of the quartz crucible 1 is uniformly inlaid with high-purity particles 2, and the high-purity particles 2 are silicon carbide particles with a particle size of 1.5 mm. The height of the high-purity particles 2 protruding from the bottom of the quartz crucible 1 is 1 mm, the distance between the high-purity particles 2 is 5 mm, and the high-purity particles 2 are arranged in a matrix.
[0024] The preparation method of the above-mentioned high-efficiency crucible for polycrystalline ingots includes the following steps: (1) making a quartz crucible 1 according to the existing technology; (2) selecting high-purity particles 2; (3) uniformly inlaying the high-purity particles 2 in the quartz In the quartz slurry at the bottom of the crucible 1; (4) The high-purity particles 2 are firmly fixed on th...
Embodiment 2
[0026] Such as figure 1 , 2 As shown, the high-efficiency crucible for polycrystalline ingot casting of the present invention includes a conventional quartz crucible 1, and the bottom of the quartz crucible 1 is uniformly inlaid with high-purity particles 2, and the high-purity particles 2 are quartz particles with a particle size of 2 mm. The height of the high-purity particles 2 protruding from the bottom of the quartz crucible 1 is 1 mm, the distance between the high-purity particles 2 is 5 mm, and the high-purity particles 2 are arranged in a matrix.
[0027] The preparation method of the above-mentioned high-efficiency crucible for polycrystalline ingots includes the following steps: (1) making a quartz crucible 1 according to the existing technology; (2) selecting high-purity particles 2; (3) uniformly inlaying the high-purity particles 2 in the quartz In the quartz slurry at the bottom of the crucible 1; (4) The high-purity particles 2 are firmly fixed on the bottom of...
Embodiment 3
[0029] Such as figure 1 , 2 As shown, the high-efficiency crucible for polycrystalline ingot casting of the present invention includes a conventional quartz crucible 1, and the bottom of the quartz crucible 1 is uniformly inlaid with high-purity particles 2, and the high-purity particles 2 are silicon particles with a particle size of 1.5 mm. The height of the high-purity particles 2 protruding from the bottom of the quartz crucible 1 is 1 mm, the distance between the high-purity particles 2 is 6 mm, and the high-purity particles 2 are arranged in a matrix.
[0030] The preparation method of the above-mentioned high-efficiency crucible for polycrystalline ingots includes the following steps: (1) making a quartz crucible 1 according to the existing technology; (2) selecting high-purity particles 2; (3) uniformly inlaying the high-purity particles 2 in the quartz In the quartz slurry at the bottom of the crucible 1; (4) The high-purity particles 2 are firmly fixed on the bottom...
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