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Production method for ultra-pure gallium

A production method and ultra-high technology, applied in the field of ultra-high-purity gallium production, can solve the problems of strict control of operating conditions, complex equipment structure, poor implementability, etc., and achieve simple equipment, high separation efficiency, and easy operation Effect

Active Publication Date: 2014-06-18
CHINA SHENHUA ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above-mentioned direct purification method of metal material gallium generally has the following disadvantages: complex equipment structure, large investment, harsh operating condition control, low output, long production time, etc., which makes its large-scale industrial implementability worse

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] In a reactor full of high-purity nitrogen, put 580g of mixed particles of gallium and magnesium (wherein Ga:Mg=30%:70% (weight)), add 2100g of anhydrous ether as a solvent, heat to reflux, and stir 1061g methyl iodide (CH 3 1), after adding methyl iodide, continue to reflux for 3 hours to obtain the mixture; then place the mixture to room temperature and filter to remove magnesium iodide therein, and the filtrate is distilled off under reduced pressure at 1000Pa to remove excess solvent, and then The residue is placed in an ice-water bath under reduced pressure (1mmHg pressure) to precipitate a complex (substance A) formed by trimethylgallium and an organic solvent, and then heat the complex (substance A) (at a temperature of 70°C) Trimethylgallium (substance B) was decomposed in 4 hours; the obtained trimethylgallium (substance B) was placed in a precision vacuum distillation device, and the reflux ratio was 1, the operating pressure at the top of the tower was 100Pa, ...

Embodiment 2

[0037] In a reactor full of high-purity nitrogen, put 580g of mixed particles of gallium and magnesium (wherein Ga:Mg=50%:50% (weight)), add 2954g of anhydrous ether as a solvent, heat to reflux, and stir 2050g methyl iodide (CH 31), after adding methyl iodide, continue to reflux for 4 hours to obtain the mixture; then place the mixture to room temperature and filter to remove the magnesium iodide therein, and the filtrate is distilled off under reduced pressure at 1000Pa to remove excess solvent, and then The residue is placed in an ice-water bath under reduced pressure (pressure 50mmHg) to precipitate a complex (substance A) formed by trimethylgallium and an organic solvent, and then heat the complex (substance A) (temperature 100°C) Trimethylgallium (substance B) was decomposed in 3 hours; the obtained trimethylgallium (substance B) was placed in a precision vacuum distillation device, the reflux ratio was 1, the operating pressure at the top of the tower was 100Pa, and the...

Embodiment 3

[0040] In a reaction kettle full of high-purity nitrogen, put 580g of mixed particles of gallium and magnesium (wherein Ga:Mg=70%:30% (weight)), add 2100g of anhydrous tetrahydrofuran as a solvent, heat to reflux, and stir 4963g methyl iodide (CH 3 1), after adding methyl iodide, continue to reflux for 5 hours to obtain the mixture; then place the mixture to room temperature and filter to remove the magnesium iodide therein, and the filtrate is distilled off under reduced pressure at 1000Pa to remove excess solvent, and then the distillate The residue is placed in an ice-water bath under reduced pressure (100mmHg pressure) to precipitate a complex (substance A) formed by trimethylgallium and an organic solvent, and then heat the complex (substance A) (temperature 140°C) Trimethylgallium (substance B) was decomposed in 4 hours; the obtained trimethylgallium (substance B) was placed in a precision vacuum distillation device, and the reflux ratio was 1, the operating pressure at ...

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Abstract

The invention relates to a production method for ultra-pure gallium. The production method for ultra-high gallium is simple and stable, easy to control, high in separating efficiency and good for industrial production.

Description

technical field [0001] The invention relates to a production method of ultra-high-purity gallium. Background technique [0002] Ultra-high-purity gallium metal is an important semiconductor basic material. With the wide application of its series of compounds gallium arsenide, gallium phosphide, gallium aluminum arsenide, etc. in high-speed integrated circuits, LEDs, photosensitive elements and other fields, the high-purity gallium The market demand is increasing rapidly. The current consumption of high-purity gallium in the world is 200t.a -1 , the consumption in Japan alone exceeds 120t·a -1 , and the global consumption is increasing by more than 20% every year. High-purity gallium is also one of the high-tech materials that my country focuses on. [0003] At present, ultra-high-purity gallium metal is mainly directly produced through several combinations of metal material purification and refining technologies such as electrolytic refining, zone smelting, single crysta...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22B58/00
CPCY02P10/20
Inventor 韩建国顾大钊郭昭华池君洲王永旺王丹妮郭志峰张云峰
Owner CHINA SHENHUA ENERGY CO LTD