Gallium-nitride-based high electronic mobility transistor structure with barrier layer and manufacture method thereof

A high electron mobility, gallium nitride-based technology, applied in the field of GaN-based high electron mobility transistor structure and fabrication with a barrier layer, can solve the problems of increased interface roughness, reduced mobility, enhanced scattering, etc. , to achieve high two-dimensional electron gas surface density, increase the barrier height, and reduce the effect of process steps
CN103123934AActive Publication Date: 2013-05-29INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Publication Date
2013-05-29

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Abstract

A gallium-nitride-based high electronic mobility transistor structure with a barrier layer comprises a substrate, a nucleating layer manufactured on the substrate, an unintentionally doped high resistance layer manufactured on the nucleating layer, an unintentionally doped high mobility channel layer manufactured on the unintentionally doped high resistance layer, an unintentionally doped aluminum nitride space layer manufactured on the unintentionally doped high mobility channel layer, an unintentionally doped barrier layer manufactured on the unintentionally doped aluminum nitride space layer and an unintentionally doped gallium nitride cap layer manufactured on the unintentionally doped barrier layer. The gallium-nitride-based high electronic mobility transistor structure can improve a limiting effect on channel two-dimensional electron gas and increase output power of a developed device, and simultaneously grate current of the device is reduced.
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Description

technical field

[0001] The invention belongs to the technical field of semiconductors, in particular to a gallium nitride-based high electron mobility transistor (HEMT) structure and manufacturing method with a potential barrier layer. The transistor uses a combination of non-intentionally doped aluminum gallium nitride and aluminum nitride The new barrier layer and high-mobility gallium nitride channel layer can significantly increase the two-dimensional electron gas surface density and the confinement effect on the two-dimensional electron gas, reduce the influence of the heterojunction interface on the electronic properties of the channel, and improve The performance of the developed device. Background technique

[0002] Gallium nitride-based semiconductor materials have excellent physical and chemical properties, and are especially suitable for the preparation of high-frequency, high-power, high-electron mobility transistors. GaN-based high electron mobility transistors...

Claims

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