Gallium-nitride-based high electronic mobility transistor structure with barrier layer and manufacture method thereof
A high electron mobility, gallium nitride-based technology, applied in the field of GaN-based high electron mobility transistor structure and fabrication with a barrier layer, can solve the problems of increased interface roughness, reduced mobility, enhanced scattering, etc. , to achieve high two-dimensional electron gas surface density, increase the barrier height, and reduce the effect of process steps
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[0045] The present invention provides a gallium nitride-based HEMT structure with barrier layers, which includes:
[0046] A substrate 10 whose material is sapphire.
[0047] A nucleation layer 20 is formed on the substrate 10. The material of the nucleation layer 20 is low-temperature gallium nitride with a thickness of 100 nm;
[0048] An unintentionally doped high resistance layer 30 is formed on the nucleation layer 20. The aluminum component y of the unintentionally doped high resistance layer 30 is y=0, and the material of the unintentionally doped high resistance layer 30 is gallium nitride with a thickness of 3 μm.
[0049] An unintentionally doped high-mobility channel layer 40 is formed on the unintentionally doped high-resistance layer 30. The material of the channel layer 40 of the unintentionally doped high mobility layer is gallium nitride with a thickness of 30 nm.
[0050] An unintentionally doped aluminum nitride space layer 50 is formed on the unin...
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