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Gallium-nitride-based high electronic mobility transistor structure with barrier layer and manufacture method thereof

A high electron mobility, gallium nitride-based technology, applied in the field of GaN-based high electron mobility transistor structure and fabrication with a barrier layer, can solve the problems of increased interface roughness, reduced mobility, enhanced scattering, etc. , to achieve high two-dimensional electron gas surface density, increase the barrier height, and reduce the effect of process steps

Active Publication Date: 2013-05-29
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
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  • Application Information

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Problems solved by technology

However, doping will reduce the integrity of the material lattice, resulting in a decrease in the crystal quality of the AlGaN layer, increasing the interface roughness between the GaN and AlGaN layers, and reducing the electron mobility; (2) using high Al Composition barrier layer AlGaN / GaN HEMT structure, as the barrier layer Al composition increases, the heterojunction band order and polarization electric field increase, which can significantly increase the two-dimensional electron gas surface density
However, when the Al composition is high, the large lattice mismatch will lead to the deterioration of the crystal quality, surface and interface quality of the AlGaN barrier layer, and the strain-induced deep level defects will increase, which will enhance the scattering and reduce the mobility; At the same time, when the Al composition is too high, the large lattice mismatch limits the thickness of the barrier layer, making it difficult to generate a strong two-dimensional electron gas

Method used

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  • Gallium-nitride-based high electronic mobility transistor structure with barrier layer and manufacture method thereof
  • Gallium-nitride-based high electronic mobility transistor structure with barrier layer and manufacture method thereof
  • Gallium-nitride-based high electronic mobility transistor structure with barrier layer and manufacture method thereof

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Embodiment

[0045] The present invention provides a GaN-based HEMT structure with a barrier layer, which includes:

[0046] A substrate 10, the material of which is sapphire.

[0047] A nucleation layer 20 is formed on the substrate 10 . The material of the nucleation layer 20 is low-temperature gallium nitride with a thickness of 100 nm;

[0048] An unintentionally doped high-resistance layer 30 is fabricated on the nucleation layer 20 . The aluminum composition y of the unintentionally doped high resistance layer 30 is 0, the material of the unintentionally doped high resistance layer 30 is gallium nitride, and the thickness is 3 μm.

[0049] An unintentionally doped high mobility channel layer 40 is fabricated on the unintentionally doped high resistance layer 30 . The material of the non-intentionally doped high-mobility layer channel layer 40 is gallium nitride with a thickness of 30 nm.

[0050] An unintentionally doped AlN space layer 50 , the unintentionally doped AlN space la...

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Abstract

A gallium-nitride-based high electronic mobility transistor structure with a barrier layer comprises a substrate, a nucleating layer manufactured on the substrate, an unintentionally doped high resistance layer manufactured on the nucleating layer, an unintentionally doped high mobility channel layer manufactured on the unintentionally doped high resistance layer, an unintentionally doped aluminum nitride space layer manufactured on the unintentionally doped high mobility channel layer, an unintentionally doped barrier layer manufactured on the unintentionally doped aluminum nitride space layer and an unintentionally doped gallium nitride cap layer manufactured on the unintentionally doped barrier layer. The gallium-nitride-based high electronic mobility transistor structure can improve a limiting effect on channel two-dimensional electron gas and increase output power of a developed device, and simultaneously grate current of the device is reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a gallium nitride-based high electron mobility transistor (HEMT) structure and manufacturing method with a potential barrier layer. The transistor uses a combination of non-intentionally doped aluminum gallium nitride and aluminum nitride The new barrier layer and high-mobility gallium nitride channel layer can significantly increase the two-dimensional electron gas surface density and the confinement effect on the two-dimensional electron gas, reduce the influence of the heterojunction interface on the electronic properties of the channel, and improve The performance of the developed device. Background technique [0002] Gallium nitride-based semiconductor materials have excellent physical and chemical properties, and are especially suitable for the preparation of high-frequency, high-power, high-electron mobility transistors. GaN-based high electron mobility transistors...

Claims

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Application Information

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IPC IPC(8): H01L29/778H01L29/06H01L21/335
Inventor 王晓亮彭恩超王翠梅肖红领冯春姜丽娟陈竑
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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