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Manufacturing method of magnesium/arsenium-codoped p-type zinc oxide film

A technology of zinc oxide film and manufacturing method, applied in ion implantation plating, metal material coating process, coating, etc., can solve difficult problems such as p-type ZnO materials

Inactive Publication Date: 2013-06-12
LIYANG HUAJING ELECTRONICS MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the self-compensation of intrinsic shallow donor defects in ZnO, it is difficult to use Sb to dope p-type ZnO materials.

Method used

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  • Manufacturing method of magnesium/arsenium-codoped p-type zinc oxide film

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] The mole percentage of Mg in the p-type ZnO crystal film is 8-13%, and the mole percentage of arsenic is 0.5-1.5%. The piezoelectric constant d of the p-type ZnO crystal film grown after co-doping with magnesium and arsenic at room temperature 33 Greater than 18pC / N, its resistivity greater than ρ greater than 10 10 Ω·cm.

[0019] The following describes the manufacturing method of p-type ZnO crystal film grown by co-doping magnesium and arsenic proposed by the present invention.

[0020] In the first step, sapphire is selected as the substrate 1, and the substrate 1 is placed in an ultrasonic oscillator with absolute ethanol for cleaning to remove the grease on the surface of the substrate 1, and then placed in an ultrasonic oscillator with deionized water. Wash in an ultrasonic oscillator to remove residual absolute ethanol;

[0021] In the second step, zinc oxide powder with a purity of 99.99%, magnesium oxide powder with a molar content of magnesium of 8-13%, and...

Embodiment 2

[0029] The mole percentage of Mg in the p-type ZnO crystal thin film is 11%, and the mole percentage of arsenic is 0.8%. The piezoelectric constant d of the p-type ZnO crystal film grown after co-doping with magnesium and arsenic at room temperature 33 Greater than 18pC / N, its resistivity greater than ρ greater than 10 10 Ω·cm.

[0030] The following describes the manufacturing method of p-type ZnO crystal film grown by co-doping magnesium and arsenic proposed by the present invention.

[0031] In the first step, sapphire is selected as the substrate 1, and the substrate 1 is placed in an ultrasonic oscillator with absolute ethanol for cleaning to remove the grease on the surface of the substrate 1, and then placed in an ultrasonic oscillator with deionized water. Wash in an ultrasonic oscillator to remove residual absolute ethanol;

[0032] In the second step, zinc oxide powder with a purity of 99.99%, magnesium oxide powder with a molar content of magnesium of 11%, and ar...

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Abstract

The invention discloses a manufacturing method of a magnesium / arsenium-codoped p-type zinc oxide film, which comprises the following steps: placing sapphire used as a substrate in an ultrasonic oscillator containing anhydrous ethanol, cleaning to remove grease on the surface of the substrate, then placing the substrate in an ultrasonic oscillator containing deionized water, and cleaning to remove the residual anhydrous ethanol; mixing zinc oxide powder having a purity of 99.99%, magnesium oxide powder having a magnesium mol content of 8-13% and arsenium oxide powder having an arsenium mol content of 0.5-1.5%, and then pressing to form a target material; placing the substrate into a magnetron sputtering reaction chamber, and depositing the target material on the substrate through sputtering in an inert gas environment based on a radio-frequency magnetron sputtering method, thus forming a magnesium / arsenium-codoped p-type ZnO crystal film having a thickness of 200-400nm on the substrate; and naturally cooling the substrate after the previous step.

Description

technical field [0001] The invention belongs to the field of semiconductor lasers, and in particular relates to a method for manufacturing a magnesium-arsenic co-doped p-type zinc oxide film that can be used for semiconductor laser diodes. Background technique [0002] Zinc oxide (ZnO) is similar to GaN in terms of lattice structure, unit cell parameters and bandgap width, and has a higher melting point and greater exciton binding energy than GaN, and has lower photoluminescence and stimulated emission threshold as well as good electromechanical coupling properties, thermal and chemical stability. Therefore, it has great potential in the application of blue-violet light-emitting diodes, lasers and related optoelectronic devices. At room temperature, the band gap of zinc oxide (ZnO) is 3.37eV, and the free exciton binding energy is as high as 60meV, which is much larger than GaN's exciton binding energy of 25meV and room temperature thermal ionization energy of 26meV, so it ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/35
Inventor 钱时昌
Owner LIYANG HUAJING ELECTRONICS MATERIAL