CMOS (Complementary Metal-Oxide-Semiconductor) image sensor and forming method thereof
An image sensor, pixel area technology, applied in radiation control devices and other directions, can solve the problem of further improvement of light sensitivity, and achieve the effects of increased aperture ratio, stable performance, and improved performance
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no. 1 example
[0057] Please refer to Figure 6 , provide a substrate 300, the substrate 300 includes a first pixel region I and a second pixel region II adjacent thereto; a shallow trench 301 is formed in the substrate 300, and the shallow trench 301 is located in the first pixel region between I and the second pixel area II.
[0058] The substrate 300 is used to provide a platform for subsequent processes. The material of the substrate 300 is a semiconductor material, such as single crystal silicon, single crystal germanium; or the substrate 300 can also be silicon on insulator (SOI), etc., which will not be repeated here. The substrate 300 includes a plurality of adjacent pixel areas, and each pixel area includes a photosensitive unit for receiving external light signals and converting the light signals into electrical signals. In the embodiment of the present invention, the first pixel region I and the second pixel region II are taken as examples for exemplary description. The first p...
example 1
[0082] In Example 1 of the present invention, the conductive layer 305 is subsequently electrically connected to the interconnected metal lines on the surface of the interlayer dielectric layer, and its specific formation process is as follows:
[0083] Please refer to Figure 9 , forming an interlayer dielectric layer 309 covering the surface of the substrate 300 and the dielectric layer 307; forming a second mask layer 311 on the surface of the interlayer dielectric layer 309, and the second mask layer 311 has a second opening 313. The second opening 313 defines the position and size of the conductive plug.
[0084] The interlayer dielectric layer 309 is used to isolate the substrate 300 from the interconnection metal lines subsequently formed on the surface of the interlayer dielectric layer 309 . The material of the interlayer dielectric layer 309 is a dielectric material, such as silicon oxide, silicon nitride, or silicon oxynitride. The formation process of the interla...
example 2
[0097] Different from Example 1, in Example 2, a transistor is formed on the substrate surface of the first pixel region or the second pixel region. To realize the electrical connection between the gate of the transistor and the conductive layer, the specific forming steps include:
[0098] Please refer to Figure 13 , forming transistors on the surface of the substrate 300 of the first pixel region I or the second pixel region II.
[0099] The transistor and the photosensitive unit of each pixel unit are mutually staggered, so as to prevent the transistor from blocking light from entering the photosensitive unit. The transistor includes a gate insulating layer 401 located on the surface of the substrate 300, a gate electrode layer 403 covering the surface of the gate insulating layer 401, and the sides of the surface of the substrate 300 located on both sides of the gate electrode layer 403 and the gate insulating layer 401. Wall 405.
[0100] Wherein, the gate insulating l...
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