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Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system

A technology of chemical vapor deposition and microwave plasma, which is applied in the direction of chemical instruments and methods, diamond, and chemically reactive gases, can solve the problems of increased defect density and slow growth rate

Active Publication Date: 2013-06-12
IIA TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Another difficulty in the growth of single crystal CVD diamond is the slow growth rate
Although growth rates of 70 microns to 100 microns per hour can be achieved by adding higher concentrations of nitrogen to the CVD gas, defects are prevalent and defect density typically increases with growth rate

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  • Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system
  • Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system
  • Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system

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Embodiment Construction

[0055] The method of growing single crystal diamond according to the present invention includes a CVD process using microwave plasma.

[0056] Diamond is grown on a substrate containing diamond seeds, which may be 3 x 3 mm to 5 x 5 mm in size. The method is carried out in a microwave plasma chamber.

[0057] The crystallographic orientation of the seeds was determined and seeds with an orientation other than (100) were excluded. The (100) oriented seed crystals are polished to roughness on the order of visible light wavelengths in the preparation method of the CVD process.

[0058] Once the seeds are in the chamber, the temperature inside the chamber is increased from room temperature to 750°C to 1200°C and the pressure inside the chamber is reduced to 120mbar to 160mbar.

[0059] A gas for diamond growth is supplied to the chamber, and the gas includes methane (CH 4 ), hydrogen (H 2 ), nitrogen combined with diborane (N 2 ) and helium (He) and the gases flowed through th...

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Abstract

The present application discloses the details of a microwave plasma chemical vapor deposition process that uses Nitrogen and Diborane simultaneously in combination along with the Methane and Hydrogen gases to grow white color diamonds. The invention embodies using nitrogen to avoid inclusions and impurities in the CVD diamond samples and Diborane for the color enhancement during the growth of diamond. It is also found that heating of the so grown diamonds to 2000 C results in significant color enhancement due to the compensation of Nitrogen and Boron centers in the samples. The origin of the various colors in diamond is explained on the basis of the band diagram of CVD diamond.

Description

technical field [0001] The present invention relates to the growth of white single crystal diamond in a microwave plasma chemical vapor deposition apparatus. In particular, the invention relates to the growth of white diamond by using diborane and nitrogen in combination with methane and hydrogen. Background technique [0002] The growth method of polycrystalline particles of diamond was developed by W.G.Eversole in 1962 1 patented for the first time. Since then, many research groups and researchers have used various CVD techniques to deposit polycrystalline diamond 2-5 and single crystal diamond 6-8 . Although polycrystalline diamond has similar properties to single crystal diamond, polycrystalline diamond has grain boundaries and defects 8-10 However, it cannot be a potential material for new applications. [0003] For example, thermal conductivity of polycrystalline diamond is still not as good as that of natural diamond 11,12 . In fact, in polycrystalline diamond...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/00C01B31/06C23C16/27C23C16/511C23C16/52
CPCC01P2002/82C30B25/20C30B29/04C30B33/02C01B32/25C30B25/165C01B32/26A44C17/00
Inventor 得维·尚卡尔·米斯拉
Owner IIA TECH