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Manufacturing method for solar cell

A technology of solar cells and manufacturing methods, applied in the direction of final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve the problems of low impurity concentration, high battery series resistance, etc., achieve improved effects, reduce damage and loss, and reduce reverse diffusion the effect of time

Inactive Publication Date: 2015-07-01
NANTONG UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, selective doping requires a low concentration of impurities on the surface of the battery. Therefore, in the case of ensuring a low surface doping concentration, the method of diffusion may cause the concentration of impurities in the battery to be too low, resulting in a high series resistance of the battery. Therefore, It is very important to choose a new process method to realize the preparation of high-performance selective doping cells

Method used

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  • Manufacturing method for solar cell
  • Manufacturing method for solar cell
  • Manufacturing method for solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Such as figure 1 Shown is a schematic flow chart of a method for manufacturing a solar cell according to Embodiment 1 of the present invention. The method specifically includes the following steps:

[0037] 1a. Perform N-type ion implantation on the P-type crystalline silicon wafer, so that phosphorus is implanted into the silicon wafer to form a PN junction. In this step, the energy of ion implantation is 50-60KV, the inclination angle is 7 degrees, and the rotation angle is 180 degrees. The dose is 1e13 / cm 2 ;

[0038] 2a. Deposit phosphosilicate glass 1 with a thickness of about 0.05 microns on the surface of the silicon wafer by magnetron sputtering. The concentration of phosphorus in phosphosilicate glass 1 is about 1e19 / cm 3 ;

[0039] 3a. Remove the phosphosilicate glass other than the electrode area on the upper surface of the silicon wafer; in this step, the phosphosilicate glass in the electrode area is retained by screen printing, and the phosphosilicate g...

Embodiment 2

[0048] The steps of this example are the same as those of Example 1, the difference lies in the process parameters of high-temperature diffusion in dry oxygen environment in step 5a (step 5). In this example, the process temperature of high-temperature diffusion is 1000°C, and the duration is 5 minutes .

Embodiment 3

[0050] The steps of this example are the same as those of Example 1, the difference lies in the process parameters of high-temperature diffusion in dry oxygen environment in step 5a (step 5). In this example, the process temperature of high-temperature diffusion is 1100°C, and the duration is 2 minutes .

[0051] After simulating the above three embodiments, it is found through comparison that with the increase of the diffusion temperature in the reverse diffusion process, the PN junction of the battery is continuously deepened. The impurity concentration on the surface of the battery first increases and then decreases, but the impurity concentration in the electrode region gradually increases with the increase of temperature. The heavily doped impurities in the electrode region mainly diffuse into the battery body, and the lateral diffusion is small. This is related to the deposition of the intrinsic amorphous silicon layer on the surface of the battery. Excessive lateral dif...

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Abstract

The invention relates to a manufacturing method for a solar cell. The manufacturing method includes the steps: injecting impurities into a silicon slice by means of ion injection to form a PN junction; depositing a silicon dioxide film containing doping elements; removing silicon dioxide outside an electrode area of the upper surface of the silicon slice; depositing an intrinsic amorphous silicon layer on the upper surface of the silicon slice; diffusing the silicon slice in a dry-oxygen environment at a high temperature, reversely diffusing doping elements in a non-electrode area into the amorphous silicon layer, further diffusing doping elements in an oxidation layer of the electrode area to the electrode area and forming a surface oxidation layer; removing the amorphous silicon layer and the oxidation layer on the surface of the silicon slice; depositing a silicon nitride antireflection film on the surface of the silicon slice; and finally, sintering a metal electrode. By means of ion injection, the concentration of surface impurities is reduced, impurities in the non-electrode area are absorbed by amorphous silicon at the high temperature, the doping concentration of the non-electrode area is further reduced, the doping concentration difference between the electrode area and the non-electrode area is increased, and the performance of the cell is improved.

Description

technical field [0001] The invention relates to a method for manufacturing a solar cell and belongs to the technical field of solar cell manufacturing. Background technique [0002] Since the 1950s, people have improved the conversion efficiency of silicon-based solar cells by developing various structures and processes of silicon-based solar cells. The conversion efficiency of solar cells has increased from the initial few percentage points to more than 18% of the current monocrystalline silicon cells. Silicon-based solar cells have become the world's main source of clean energy. However, the conversion efficiency of solar cells cannot meet people's needs at present. [0003] Selectively doped solar cells are an effective low-cost and high-efficiency solar cell. The structural feature of selectively doped solar cells is that heavy doping is carried out on the upper electrode coverage area of ​​the solar cell to reduce the contact resistance of the cell, while light dopin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/20
CPCY02P70/50
Inventor 章国安王强姚滢孙树叶朱海峰
Owner NANTONG UNIVERSITY