Preparation method of cadmium telluride thin-film solar cell and graphite conductive paste used by preparation method

A technology for solar cells and conductive paste, which is applied in the directions of carbon silicon compound conductors, circuits, electrical components, etc., can solve the problems of high cost of cadmium telluride thin film solar cells, high material prices, and high equipment costs, and is beneficial to large-scale industries. chemistry, simple preparation process and low cost

Inactive Publication Date: 2013-07-10
WUXI SUNTECH POWER CO LTD +1
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Currently commonly used back contact layer materials are zinc telluride (ZnTe), mercury telluride (HgTe), antimony telluride (Sb 2 Te 3 ), etc. These materials are mostly compound semiconductor materials. On the one hand, their disadvantages are that the material itself is relatively expensive; deposition, so there is no advantage in actual industrialization, making the cost of cadmium telluride thin film solar cells relatively high

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of cadmium telluride thin-film solar cell and graphite conductive paste used by preparation method
  • Preparation method of cadmium telluride thin-film solar cell and graphite conductive paste used by preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Embodiment 1: A preparation method of cadmium telluride thin film solar cell and graphite conductive paste used therein

[0038] The cadmium telluride thin film solar cell structure that the present invention makes is as follows figure 1 shown in the attached figure 1 In , the thicknesses of layers and regions are exaggerated for clarity. Also, the illustrated thickness ratios between the layers do not actually reflect the thickness ratios of the layers in the solar cell. The cadmium telluride thin film solar cell is composed of a transparent conductive film 1, a window layer 2, a CdTe absorbing layer 3, a conductive back contact layer 4 made of graphene and graphite, and a metal back electrode layer 5.

[0039]Similar to the conventional CdTe thin film solar cell, the CdTe thin film solar cell of the present invention also includes a transparent conductive film 1, a window layer 2 and a CdTe absorber layer 3, and the window layer 2 and the CdTe absorber layer 3 are u...

Embodiment 2

[0052] Embodiment 2, a kind of preparation method of cadmium telluride thin-film solar cell and graphite conductive paste used therefor

[0053] A method for preparing a cadmium telluride thin-film solar cell, comprising forming a cadmium telluride layer, covering one side of the cadmium telluride layer with a graphite conductive paste with a thickness of 2 microns, drying it in an annealing furnace at a temperature of 260°C Heat treatment under conditions for 40 minutes; wherein, the graphite conductive paste is composed of the following materials in mass percentage:

[0054] Base material 90%;

[0055] Graphene 10%;

[0056] The base material is carbon black; the particle size of the base material is 0.005-0.9 microns; the graphene is a single-layer graphene. In this embodiment, except for the back contact layer 4 , the preparation method of other parts is the same as that in Embodiment 1, and a known preparation method can also be used. In this embodiment, since no dispe...

Embodiment 3

[0057] Embodiment 3, a preparation method of cadmium telluride thin film solar cell and graphite conductive paste used therefor

[0058] A method for preparing a cadmium telluride thin-film solar cell, comprising forming a cadmium telluride layer, covering one side of the cadmium telluride layer with a graphite conductive paste with a thickness of 1 micron, drying it in an annealing furnace at a temperature of 240°C Heat treatment 50 minutes under condition; Wherein, the formula of described graphite conductive paste is shown in Table 1:

[0059] The base material is graphite; the particle size of the base material is 0.5-0.7 microns; the graphene is single-layer graphene. In this embodiment, except for the back contact layer 4 , the preparation method of other parts is the same as that in Embodiment 1, and a known preparation method can also be used.

[0060] Table 1: Formulation of graphite conductive paste

[0061]

[0062] Note: basic material: embodiment four ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
thicknessaaaaaaaaaa
carrier mobilityaaaaaaaaaa
Login to view more

Abstract

The invention provides a preparation method of a cadmium telluride thin-film solar cell and graphite conductive paste used by the preparation method. The preparation method comprises the following steps: a cadmium telluride layer is formed; the graphite conductive paste which is 0.5-3 micrometers in thickness covers one side face of the cadmium telluride layer; heat treatment is conducted for 30-60 minutes in an annealing furnace under the temperature condition of 200-300 DEG C after drying is conducted; the graphite conductive paste is mainly formed by 60%-90% of base materials and 5%-33% of grapheme; the base materials comprises graphite or / and carbon black; the particle diameter of the base materials is 0.005-0.9 micrometers; the grapheme is arranged in 1 to 10 layers. According to the preparation method of the cadmium telluride thin-film solar cell and the graphite conductive paste used by the preparation method, back contact graphite conductive paste containing the grapheme is used as a back contact layer; due to the ultrastrong conductivity of the grapheme, a layer of ohmic contact which is low in resistance and high in stability is formed between a P type CdTe thin film and a metal back electrode; and therefore the performance of the cadmium telluride thin-film solar cell is effectively improved.

Description

technical field [0001] The invention relates to a preparation method of a cadmium telluride (CdTe) thin-film solar cell and a graphite conductive paste used therefor, belonging to the technical field of thin-film solar cells. Background technique [0002] With the growth of population and economy in today's world, the increasing scarcity of energy resources, the deteriorating environment and people's increasing demand for electric energy, the development and utilization of solar energy has set off an upsurge on a global scale. This is very conducive to the sustainable development of the ecological environment and the benefit of future generations, so countries around the world are investing in research and development of solar cells. A solar cell is a device that uses the photovoltaic effect to directly convert sunlight energy into electrical energy. There are many types of solar cells, one of which is thin-film solar cells. [0003] The cadmium telluride thin film solar c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01B1/04H01L31/0224H01L31/18
CPCY02P70/50
Inventor 牛学鹏杨培
Owner WUXI SUNTECH POWER CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products