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An alkaline chemical mechanical polishing solution

A chemical mechanical and polishing liquid technology, which is applied in the fields of polishing compositions containing abrasives, electrical components, semiconductor/solid-state devices, etc., can solve the problem of severe surface loss of the barrier layer, and achieve less residual pollutants and high stability , Defective ability strong effect

Active Publication Date: 2016-06-22
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the polishing liquid has a severe loss on the surface of the barrier layer during polishing.

Method used

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  • An alkaline chemical mechanical polishing solution
  • An alkaline chemical mechanical polishing solution
  • An alkaline chemical mechanical polishing solution

Examples

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Embodiment Construction

[0016] The following examples are used to further illustrate the present invention, but the present invention is not limited thereto. In the following examples, the percentages are all mass percentages.

[0017] The formulations of Examples 1-14 and Comparative Examples 1-2 of the chemical mechanical polishing liquid of the present invention are given. According to the components and their contents listed in Table 1, they are mixed uniformly in deionized water, and adjusted to all levels with a pH regulator. A pH value is required to prepare a chemical mechanical polishing liquid. Table 2 shows a comparison of the removal rate and corrective ability of different materials in Examples 1-14 and Comparative Examples 1-2.

[0018] Polishing conditions: The polishing machine is Logitech (UK) 1PM52 type, FUJIBO polishing pad, 4cm×4cm square wafer (Wafer), grinding pressure 1.5psi, grinding table speed 70 rpm, grinding head rotation speed 150 rpm, The polishing liquid droplet accelerati...

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PUM

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Abstract

Provided is an alkaline chemical-mechanical polishing solution comprising abrasive particles, an azole compound, one or more C1-C4 quaternary ammonium base, an oxidant, water and a pH regulator. The pH value of the polishing solution is from 8 to 12. In alkaline polishing environment, the polishing solution can fulfill the requirements of the polishing rate and the selection ratio of various materials in the course of polishing the barrier layer and can show extreme ability of remedying the surface defect of semiconductor device. The evenness of surfaces is achieved rapidly, the work efficiency is improved, and the production cost is reduced.

Description

Technical field [0001] The invention relates to a chemical mechanical polishing liquid. Background technique [0002] With the continuous development of semiconductor technology, the device size of integrated circuits has shrunk and the number of wiring layers has increased. Metal copper has been widely used as a material for interconnection lines. The advantage of copper over aluminum is that it has a lower resistivity and is more resistant to electromigration. High impedance. However, in order to prevent copper from dissolving in the dielectric material, a diffusion barrier layer needs to be covered between the copper and the dielectric material. Conventional barrier layer materials include tantalum, tantalum nitride, titanium, and titanium nitride. [0003] At present, the more wiring layers of integrated circuits manufactured by semiconductor manufacturers, the planarization technology of each layer of integrated circuits becomes more critical. Among them, the chemical mechani...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02
CPCC09G1/02H01L21/3212
Inventor 何华锋王晨
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD