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Method for preparing high-purity titanium plate for use as target

A pure titanium plate and target technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problems of difficult production and high technical requirements, and achieve the effect of reducing shrinkage defects

Active Publication Date: 2015-04-01
WESTERN TITANIUM TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the high technical requirements of high-purity titanium plates for targets, the production is difficult, especially in the high-end target markets such as electronic devices, semiconductors, and flat-panel displays. There are no professional companies and mature technologies for producing high-purity titanium plates for targets in China.

Method used

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  • Method for preparing high-purity titanium plate for use as target
  • Method for preparing high-purity titanium plate for use as target

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] to combine figure 1 , the preparation method of the high-purity titanium plate for the target in this embodiment includes the following steps:

[0028] Step 1. Press the zero-grade sponge titanium particles with a particle size of 0.83mm to 12.7mm and meet the national standard GB / T2524-2002 into a density of 3.3g / cm 3 Then a plurality of the electrode blocks are vacuum plasma welded in a vacuum plasma welding box to obtain a consumable electrode; before pressing, the method of stirring can be used to make the size particles of zero-grade sponge titanium evenly distributed to ensure that the electrodes The density of the block is consistent; the pressed electrode block must be kept intact, without defects such as slag falling, delamination, and cracks;

[0029] Step 2, placing the consumable electrode described in step 1 in a vacuum consumable arc melting furnace, and performing vacuum consumable arc melting twice under the condition that the degree of vacuum is not gr...

Embodiment 2

[0037] to combinefigure 1 , the preparation method of the high-purity titanium plate for the target in this embodiment includes the following steps:

[0038] Step 1. Press the zero-grade sponge titanium particles with a particle size of 0.83 mm to 12.7 mm and meet the national standard GB / T2524-2002 into a density of 3.4 g / cm 3 Then a plurality of the electrode blocks are vacuum plasma welded in a vacuum plasma welding box to obtain a consumable electrode; before pressing, the method of stirring can be used to make the size particles of zero-grade sponge titanium evenly distributed to ensure that the electrodes The density of the block is consistent; the pressed electrode block must be kept intact, without defects such as slag falling, delamination, and cracks;

[0039] Step 2, placing the consumable electrode described in step 1 in a vacuum consumable arc melting furnace, and performing vacuum consumable arc melting twice under the condition that the degree of vacuum is not g...

Embodiment 3

[0047] to combine figure 1 , the preparation method of the high-purity titanium plate for the target in this embodiment includes the following steps:

[0048] Step 1. Press the zero-grade sponge titanium particles with a particle size of 0.83mm to 12.7mm and meet the national standard GB / T2524-2002 into a density of 3.5g / cm 3 Then a plurality of the electrode blocks are vacuum plasma welded in a vacuum plasma welding box to obtain a consumable electrode; before pressing, the method of stirring can be used to make the size particles of zero-grade sponge titanium evenly distributed to ensure that the electrodes The density of the block is consistent; the pressed electrode block must be kept intact, without defects such as slag falling, delamination, and cracks;

[0049] Step 2, placing the consumable electrode described in step 1 in a vacuum consumable arc melting furnace, and performing vacuum consumable arc melting twice under the condition that the degree of vacuum is not gr...

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Abstract

The invention provides a method for preparing a high-purity titanium plate for use as a target. The method comprises the following steps of: pressing sponge titanium particles into an electrode block and then welding the electrode block into a consumable electrode; 2, performing vacuum arc remelting of the consumable electrode to obtain a cast ingot; 3, performing the primary heating treatment on the cast ingot; 4, performing upset drawing forging on the cast ingot, thereby obtaining a plate blank; 5, performing the secondary heating treatment on the plate blank; 6, rolling the plate blank, thereby obtaining a semi-finished product plate; 7, performing annealing, straightening and surface figuring on the semi-finished product plate, thereby obtaining the high-purity titanium plate for use as the target. The mass purity of the high-purity titanium plate prepared by the method provided by the invention for use as the target is not less than 99.8%, and the average grain size of the plate is less than 100 microns; and the grain sizes are even and uniform, thereby meeting related technical requirements of the sputtering target; and as a result, the high-purity titanium plate can be widely applied to the field of sputtering films of electronic devices, semiconductors, plane display and the like.

Description

technical field [0001] The invention belongs to the technical field of preparation of rare metal materials, and in particular relates to a method for preparing a high-purity titanium plate for a target. Background technique [0002] As a special-purpose material, the target has a strong application purpose and a clear application background. Sputtering targets have been widely used in many fields such as decoration, tooling, glass, electronic devices, semiconductors, magnetic recording, flat-panel displays, and solar cells. Sputtering targets are a relatively new industry in my country; there is still a large gap between the level of my country's target technology industry and international targets, and the global high-end target market is still mainly monopolized by target companies in Europe, America or Japan. So far, China has not yet had a professional large company that produces targets, and a large number of targets still need to be imported from abroad, especially ta...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34
Inventor 党鹏高维娜王瑞琴吴晓东付文杰李辉张清刘华王洋周玉川陈钧伟杨利李鹏范涵
Owner WESTERN TITANIUM TECH
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