Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Broadband frequency selector

A frequency selection and broadband technology, applied in waveguide devices, electrical components, circuits, etc., can solve the problems of failure of frequency selection characteristics, unstable performance, performance deterioration, etc., achieve good frequency selection characteristics, easy design optimization, reduce The effect of electric size

Active Publication Date: 2015-04-08
XIDIAN UNIV
View PDF7 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, in the common application fields of FSS such as radome and aircraft stealth, the requirement that the corresponding structure can work normally when the electromagnetic wave is incident at a large angle has been put forward. The performance at different angles of incidence is not stable enough, and it is easy to produce large resonance frequency shifts, especially at large angles of incidence, its performance deteriorates significantly, which can cause the frequency selection characteristics of the frequency selective surface to fail in a specific frequency band, thus affecting the overall structure. performance, which greatly affects the practical application of frequency selective surfaces

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Broadband frequency selector
  • Broadband frequency selector
  • Broadband frequency selector

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] refer to figure 1 , the present invention includes a metal layer 1 and a dielectric layer 2, the metal layer is located on the upper surface of the dielectric layer, and is composed of a single-layer copper clad laminate. N hexagonal units 11 are etched on the metal layer, these hexagonal units are periodically arranged in a triangular grid, and the distance between the centers of adjacent units is 0.155 times the wavelength corresponding to the central frequency. The dielectric layer adopts an organic polymer substrate with a relative dielectric constant of 2.65, a thickness of 1mm, and N≥3.

[0031] refer to figure 2 , each hexagonal unit 11 includes a regular hexagonal patch 111 and a regular hexagonal metal wire frame 112, a regular hexagonal gap 113 is provided between the metal patch 111 and the metal wire frame 112, and the width of the regular hexagonal gap is l3 The value is 0.2mm. The perimeter of a regular hexagonal metal wire frame is 46λ / 100, and the wi...

Embodiment 2

[0035] refer to figure 1 , the present invention is composed of a single-layer copper clad laminate, including a metal layer 1 and a dielectric layer 2, and the metal layer is located on the upper surface of the dielectric layer. The dielectric layer adopts an organic polymer substrate with a relative dielectric constant of 4.4 and a thickness of 1 mm. N hexagonal units 11 are etched on the metal layer, these hexagonal units are periodically arranged in a triangular grid, and the distance between the centers of adjacent units is 0.12 times the wavelength corresponding to the center frequency, N≥3.

[0036] refer to figure 2 , each hexagonal unit 11 includes a regular hexagonal patch 111 and a regular hexagonal metal wire frame 112, the perimeter of the regular hexagonal metal wire frame is 36λ / 100, and the wire frame width is l 6 is 0.1 mm, a regular hexagonal gap 113 is provided between the metal patch 111 and the metal wire frame 112, and the width of the regular hexagona...

Embodiment 3

[0038]The structure of this example is the same as that of Example 1. Its different structural parameters are as follows:

[0039] The dielectric layer adopts an organic polymer substrate with a relative permittivity of 3.27. There are 93 hexagonal units 11 etched on the metal layer. These hexagonal units are arranged periodically in a triangular grid, and are relatively The distance between the centers of adjacent hexagonal units is 0.18 times the wavelength corresponding to the center frequency.

[0040] The perimeter of the regular hexagonal metal wire frame of each hexagonal unit is 54λ / 100, and the regular hexagonal gap width l 3 0.5mm, wire frame width l 6 0.5mm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a broadband frequency selector and mainly solves the problems in the prior art that the unit size is large and the performance is poor during the large-angle incidence of an electromagnetic wave. The broadband frequency selector comprises a metal layer (1) and a medium layer (2), wherein the metal layer is positioned on the medium layer and consists of N hexagonal units (11) which are periodically arranged according to a triangular grid; N is more than or equal to 3; each unit comprises a regular hexagon metal patch (111) and a regular hexagon metal wire frame (112) at the periphery of the regular hexagon metal patch (111) and a regular hexagon gap (113) is arranged between the metal patch and the corresponding metal wire frame; an H-shaped gap (114) is vertically etched in the center of each edge of each regular hexagon gap; the H-shaped gaps are of the same size; and each H-shaped gap comprises two vertical seams of the same size and a horizontal gap which is sandwiched between the two vertical seams. The broadband frequency selector can maintain the stability of a central frequency point and high frequency selection characteristic during the incidence of the electromagnetic wave at an angle of 0 to 70 DEG, has the advantages of broad working frequency band, low loss, simple structure and easiness in implementation, and can be applied to radar domes and parabolic antennae.

Description

technical field [0001] The invention belongs to the technical field of frequency selection devices, and in particular relates to a frequency selection surface structure, which has broadband characteristics and performance stability when electromagnetic waves of 0 to 70 degrees are incident at a large angle, and can be used for radar radomes and parabolic antennas. technical background [0002] Frequency selector refers to a type of device with frequency selection characteristics, which can effectively filter out waves of a specific frequency or waves other than this frequency, so as to obtain a signal of a specific frequency or eliminate a signal of a specific frequency. At present, the most widely used frequency selectors mainly include filters and frequency selective surfaces. [0003] Among them, the frequency selective surface (FSS) refers to a type of two-dimensional periodic array structure composed of specific shaped conductor patches or aperture units, which can inte...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01P1/20
Inventor 李龙张远铭严波刘海霞史琰翟会清
Owner XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com