Preparation method of composite transparent conductive film of metal nanowires and metallic oxides

A transparent conductive film, metal nanowire technology, applied in cable/conductor manufacturing, conductive layers on insulating carriers, circuits, etc., can solve the problems of poor environmental stability, low adhesion, difficult processing and preparation, etc., to achieve adhesion and Good environmental stability, high surface flatness, and the effect of solving surface roughness

Inactive Publication Date: 2013-08-07
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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Problems solved by technology

However, metal nanowire transparent conductive films also have obvious shortcomings such as large surface roughness, low adhesion and poor environmental stability, which severely limit their application in optoelectronic devices.
Optoelectronic devices using it as an electrode are not only difficult to process and prepare, but also the optoelectronic performance and stability of the device are deteriorated

Method used

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  • Preparation method of composite transparent conductive film of metal nanowires and metallic oxides
  • Preparation method of composite transparent conductive film of metal nanowires and metallic oxides
  • Preparation method of composite transparent conductive film of metal nanowires and metallic oxides

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preparation example Construction

[0027] The preparation method of the above-mentioned composite layer 200 is a solution processing method such as spin coating, drop coating, doctor blade coating, and printing.

[0028] Specifically, the preparation method of the metal nanowire and metal oxide composite transparent conductive film of the present invention:

[0029] After mixing the metal nanowire solution and the metal oxide solution in different proportions, a composite layer 200 with a thickness of 30-500 nm is prepared on the planar substrate 100 by a solution processing method. The volume mixing ratio of the metal nanowire solution and the metal oxide solution is 1:100-50:1, and the solvent is an organic solvent such as ethanol or isopropanol.

[0030] The above-mentioned planar substrate 100 is rigid or flexible material such as glass, plastic, quartz or semiconductor.

[0031] The concentration of the above metal oxide solution is 1-30mg / ml. Metal oxide materials are TiOx, ZnO, V 2 o 5 、WO 3 or MoO ...

Embodiment 1

[0037] A TiO ethanol solution with a concentration of 2 mg / ml and an AgNW ethanol solution with a concentration of 0.2 mg / ml were mixed at a volume ratio of 1:1, and then metal nanowires and metal nanowires with a thickness of 60 nm were prepared on a planar substrate 100 by solution spin coating. Metal oxide thin film, as composite layer 200. Wherein the planar substrate 100 is a glass substrate; the AgNW has a diameter of 50 nm and a length of 15 μm.

Embodiment 2

[0039]A TiOx ethanol solution with a concentration of 4 mg / ml and an AgNW ethanol solution with a concentration of 0.2 mg / ml were mixed at a volume ratio of 1:1, and then metal nanowires and metal nanowires with a thickness of 100 nm were prepared on a planar substrate 100 by solution spin coating. oxide thin film, as the composite layer 200. Wherein the planar substrate 100 is a glass substrate; the AgNW has a diameter of 50 nm and a length of 15 μm.

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Abstract

The invention provides a preparation method of a composite transparent conductive film of metal nanowires and metallic oxides. The preparation method is characterized in that mixed solution of the metal nanowires and the metallic oxides is prepared by mixing metal nanowire solution and metallic oxide solution in different proportions, and then the composite transparent conductive film of the metal nanowires and the metallic oxides is prepared on a rigid or flexible planar substrate by a solution processing method. Compared with a metal nanowire transparent conductive film prepared by the metal nanowire solution individually, the composite transparent conductive film of the metal nanowires and the metallic oxides has the advantage of high surface evenness, strong adhesive force, good environmental stability and the like; and the problems of low surface evenness, weak adhesive force, poor environmental stability of the metal nanowire transparent conductive film are solved effectively. The composite transparent conductive film of the metal nanowires and the metallic oxides has application potential in the field of photoelectric devices of film solar cells, organic light-emitting diodes and the like.

Description

technical field [0001] The invention relates to the technical field of transparent conductive film materials, in particular to a method for preparing a metal nanowire and metal oxide composite transparent conductive film. Background technique [0002] Transparent conductive film is an important optoelectronic functional film, which is widely used in optoelectronic devices such as liquid crystal display, organic light emitting diode, touch screen and thin film solar cell. Since the development trend of optoelectronic devices is high performance, low cost, flexibility and light weight, higher requirements are put forward for the transparent conductive films used in them. The most commonly used and commercialized transparent conductive film is indium tin oxide (ITO) film, which has high visible light transmittance and low resistivity, and is often used in organic solar cells and organic light-emitting diodes. And other optoelectronic devices as transparent electrodes. However...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B13/00H01B5/14
Inventor 郭晓阳刘星元
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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