High-purity SiCl4 purification method

A purification method and high-purity technology, applied in the direction of silicon halide compounds, halosilanes, etc., can solve the problems such as difficult separation of azeotrope impurities, achieve the effect of eliminating particle dust, eliminating polluted products, and overcoming poor strength

Active Publication Date: 2013-08-14
杨恺
View PDF12 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is in order to solve the high-purity SiCl that existing method prepares 4 Azeotrope, boron-conta

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-purity SiCl4 purification method
  • High-purity SiCl4 purification method

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0035] Embodiment 1: High-purity SiCl in this embodiment 4 The purification method is as follows:

[0036] First, the coarse SiCl 4 , cuprous chloride or zinc chloride and inorganic salts are added to the reaction kettle, and the crude SiCl 4 The azeotrope and the inorganic salt are reacted under the catalysis of cuprous chloride or zinc chloride for 20-60min, and the inorganic salt is Na 2 CO 3 or K 2 CO 3 , the dosage of cuprous chloride or zinc chloride is crude SiCl 4 0.01%-0.1% of the mass, the amount of inorganic salt added is based on crude SiCl 4 The azeotrope content is determined to be 100.1%-102% of the azeotrope mass, and the reaction obtains a high boiling point mixture;

[0037] 2. The product of step 1 is pumped into the atmospheric rectification tower 1 through a shield pump, the heavy components are discharged from the tower still, and the light components are discharged from the top of the column, SiCl 4 The crude rectification product is extracted fr...

Example Embodiment

[0042] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the adsorbent filled in the adsorption column described in step 3 is silica gel modified by silane coupling agent γ-chloropropyl-triethoxysilane , Silane coupling agent γ-chloropropyl-trimethoxysilane modified silica gel, silane coupling agent γ-chloropropyl-dimethoxyethoxysilane modified silica gel or silane coupling agent γ-chlorine Propyl-methoxydiethoxysilane-modified silica gel. Others are the same as the first embodiment.

Example Embodiment

[0043] Embodiment 3: The difference between this embodiment and Embodiment 1 or Embodiment 2 is that the degree of vacuum described in Step 5 is -0.03MPa. Others are different from one of Embodiments 1 or 2.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a high-purity SiCl4 purification method, relates to a SiCl4 purification method, and is used for solving the technical problem that azeotrope and compound impurities containing boron, phosphorus and OH in high-purity SiCl4 prepared by the existing method are difficult to separate. The method disclosed by the invention comprises the following steps of: 1, chemical reaction; 2, rectification under normal pressure; 3, adsorption; 4, rectification under normal pressure; 5, treatment by a reduced pressure rectifying tower; and 6, storage of pure SiCl4 in a product tank under protection of high-purity nitrogen or argon, thus finishing purification of high-purity SiCl4, wherein in the step 3, an adsorbent filled in an adsorption column is an silica gel adsorbent modified by a silane coupling agent. SiCl4 purified by the method is low in production cost, the purity of ordinary-grade SiCl4 is up to 99.9999%, and the purity of fiber-grade SiCl4 is up to 99.99999999%. The method disclosed by the invention can perform continuous production, and is high in productivity. The high-purity SiCl4 purification method belongs to the field of crude product purification.

Description

technical field [0001] The present invention relates to a SiCl 4 Purification method. Background technique [0002] The electronic information industry is an important industry in the 21st century, and optical fiber communication has gradually become an important way of information transmission due to its large transmission capacity, long transmission distance, small attenuation, and strong anti-interference ability, and is one of the pillars of the future information industry. In recent years, China's optical fiber demand has surpassed that of the United Kingdom, and it is the third largest country after the United States and Japan. China has become the largest optical fiber manufacturing country. Optical fiber preform is the raw material of optical fiber, which plays a vital role in the performance and quality of optical fiber. In 2007, the domestic demand for optical fiber preform reached 20 million kilometers, in 2009 it reached 80 million kilometers, and in 2012 it re...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C01B33/107
Inventor 杨恺
Owner 杨恺
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap