Transverse high-voltage power device with ultralow specific on-conduction resistance and manufacturing method of transverse high-voltage power device

Abstract

The invention relates to a transverse high-voltage power device with ultralow specific on-resistance and a manufacturing method of the transverse high-voltage power device and belongs to the technical field of a power semiconductor device. Through photoetching and ion implantation processes, a second conducting type semiconductor heavy doping layer (5) formed at the surface of a second conducting type semiconductor drift region (2) provides a low-resistance surface conduction passage for the device during the on state and provides two conduction passages for the device together with the second conducting type semiconductor drift region (2) arranged under a reduced field layer (3). Because the ion implantation is adopted, the low-resistance surface conduction passages are added, the surface electric resistivity of the device is reduced, and the on resistance of the device is greatly reduced. Compared with an ordinary high-voltage device with the reduced field layer, the transverse high-voltage power device provided by the invention has smaller on resistance under the condition of the same chip area (or the transverse high-voltage power device has smaller chip area under the condition of the same conduction capability). The transverse high-voltage power device can be applied to various products such as consumer electronics and display driving products.

Description

Technical field [0001] The invention belongs to the technical field of semiconductor power devices, and relates to a lateral high-voltage power device with ultra-low specific on-resistance and a manufacturing method thereof. Background technique [0002] Lateral high-voltage power devices are an essential part of the development of high-voltage power integrated circuits. High-voltage power devices require high breakdown voltage, low on-resistance and low switching losses. The lateral high voltage power device achieves high breakdown voltage, and the drift region used to bear the withstand voltage is required to have a long size and low doping concentration. However, in order to meet the low on-resistance of the device, the drift region as a current channel is required to have High doping concentration. In the design of power LDMOS devices (Latral Double-diffused MOSFET), the breakdown voltage BV (Breakdown Voltage) and the specific on-resistance R on,sp (Specific on-resistance) ...

AI Technical Summary

Problems solved by technology

In the design of power LDMOS devices (Latral Double-diffused MOSFET), the breakdown voltage BV (Breakdown Voltage) and the specific on-resistance R on,sp (Specific on-resistance) There is a relationship: R on,sp ∝BV 2.3～2.6 , so when the device is applied at high voltage, the on-resistance rises sharply, which limits the application of high-voltage LDMOS devices in high-voltage power integrated circuits, especially in circuits that r...

Images