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Copper indium gallium selenide film with sodium doped based on composite substrate and preparation method thereof

A technology of copper indium gallium selenide and composite substrate, which is applied in the directions of electrical components, circuits, semiconductor devices, etc., to achieve the effects of improving performance, being easy to implement, and having a simple preparation method.

Inactive Publication Date: 2013-09-18
TIANJIN UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the polyimide film does not contain sodium element, and its polymer structure prevents sodium in the composite substrate from entering the CIGS absorber layer

Method used

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  • Copper indium gallium selenide film with sodium doped based on composite substrate and preparation method thereof
  • Copper indium gallium selenide film with sodium doped based on composite substrate and preparation method thereof
  • Copper indium gallium selenide film with sodium doped based on composite substrate and preparation method thereof

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Experimental program
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Embodiment 1

[0035] A sodium-doped copper indium gallium selenide film based on a composite substrate, the sodium-doped copper indium gallium selenide film is a sodium-doped copper indium gallium selenide film based on a polyimide film-soda glass composite substrate, such as figure 1 As shown, it is composed of glass, polyimide and copper indium gallium selenide absorbing layer film and forms a laminated structure. The substrate is composed of soda glass and polyimide film grown on its surface. The thickness of soda glass is 2mm , the thickness of the polyimide film is 25 μm; the chemical molecular formula of the copper indium gallium selenide absorbing layer film is CuIn 1-x Ga x Se 2 , where x is 0.3, the conductivity type is p-type, and the film thickness is 1.5 μm.

[0036] The preparation method of the sodium-doped copper indium gallium selenide thin film based on the composite substrate, firstly, the polyimide glue is coated on the surface of the soda glass, solidified into a polyi...

Embodiment 2

[0050] A sodium-doped copper indium gallium selenide film based on a composite substrate, the sodium-doped copper indium gallium selenide film is a sodium-doped copper indium gallium selenide film based on a polyimide film-soda glass composite substrate, such as figure 1 As shown, it is composed of glass, polyimide and copper indium gallium selenide absorbing layer film and forms a laminated structure. The substrate is composed of soda glass and polyimide film grown on its surface. The thickness of soda glass is 2mm , the thickness of the polyimide film is 25 μm; the chemical molecular formula of the copper indium gallium selenide absorbing layer film is CuIn 1-x Ga x Se 2 , where x is 0.3, the conductivity type is p-type, and the film thickness is 1.5 μm.

[0051] The preparation method of the sodium-doped copper indium gallium selenide thin film based on the composite substrate, firstly, the polyimide glue is coated on the surface of the soda glass, solidified into a polyi...

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Abstract

The invention provides a copper indium gallium selenide film with sodium doped based on composite substrate. The copper indium gallium selenide film with the sodium doped is based on a polyimide film-soda glass composite substrate, is composed of glass, polyimide and a sodium copper indium gallium selenide absorbing layer and forms a laminate structure. A preparation method thereof includes firstly coating polyimide adhesive on the surface of soda glass, curing to form the polyimide film-soda glass composite substrate, preparing a layer of a ultrathin sodium fluoride preset-layer film on the surface of the polyimide film-soda glass composite substrate, and preparing the copper indium gallium selenide film on the layer of the ultrathin sodium fluoride preset-layer film. The copper indium gallium selenide film with the sodium doped has the advantages of excellent adhesion, good crystal quality, large grain, and fewer defects, and preparation of flexible solar cells by utilizing rigidity substrates can be realized; the preparation method is simple and easy to implement, and large scale promotion and application are benefited.

Description

technical field [0001] The invention relates to the technical field of thin film solar cells, in particular to a sodium-doped copper indium gallium selenide thin film based on a composite substrate and a preparation method thereof. Background technique [0002] Copper indium gallium selenide (CIGS) belongs to group I-III-VI quaternary compound semiconductors and has a chalcopyrite crystal structure. Since the appearance of copper indium gallium selenide thin film solar cells in the 1970s, it has developed very rapidly and will gradually realize industrialization. This battery has the following characteristics: 1) The bandgap width of CIGS can be adjusted in the range of 1.04eV-1.67eV; 2) CIGS is a direct bandgap semiconductor with an absorption coefficient of up to 10 for visible light 5 cm -1 , the thickness of the copper indium gallium selenide absorbing layer is only 1.5-2.5 μm, and the thickness of the whole battery is 3-4 μm; 3) Strong radiation resistance, more suit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352H01L31/02H01L31/18
Inventor 薛玉明张嘉伟乔在祥李微许楠赵彦民李鹏海朱亚东刘君宋殿友潘宏刚冯少君刘浩尹富红
Owner TIANJIN UNIVERSITY OF TECHNOLOGY