Pellicles for use during euv photolithography processes

Abstract

Disclosed herein are various pellicles for use during extreme ultraviolet (EUV) photolithography processes. An EUV radiation device disclosed herein includes a reticle, a substrate support stage, a pellicle positioned between the reticle and the substrate support stage, wherein the pellicle is comprised of multiple layers of at least one single atomic-plane material, and a radiation source that is adapted to generate radiation at a wavelength of about 20 nm or less that is to be directed through the pellicle toward the reticle.

Description

technical field [0001] The present disclosure relates generally to the fabrication of precision semiconductor devices, and more particularly to various thin films for use during extreme ultraviolet (EUV) lithography processes. Background technique [0002] The manufacture of advanced integrated circuits such as CPUs, storage devices, and ASICs (Application Specific Integrated Circuits) requires the formation of a large number of circuit components in a given chip area according to a specified circuit layout, in which field effect transistors (NMOS and PMOS transistors) are used One of the important circuit components to manufacture such integrated circuit devices. Integrated circuit devices are generally formed by performing many process operations in a detailed sequence or process flow. Such process operations typically include deposition, etching, ion implantation, photolithography, and heating processes, which are performed in a very detailed sequence to create the final...

AI Technical Summary

Problems solved by technology

However, this solution has proven impractical, possibly due to the high light loss and light scattering caused by the membrane's wire mesh struts

This approach has largely been abandoned

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