High heat conduction substrate and manufacturing method thereof

Abstract

The invention discloses a high heat conduction substrate which comprises an aluminum base material. A connecting layer, an alloy buffering layer, an insulating layer and a conducting layer are sequentially arranged on the surface of the aluminum base material, wherein the conducting layer is formed by a first-stage conducting layer body and a second-stage conducting layer body covering the surface of the first-stage conducting layer body in a combined mode. A manufacturing method of the high heat conduction substrate includes the steps of (1) forming a layer of aluminum on one face of the alloy buffering layer to form the connecting layer for connecting the aluminum base material with the alloy buffering layer, (2) covering a layer of aluminum on the other face of the alloy buffering layer through physical vapor deposition or hot dipping, (3) converting the aluminum layer in the last step into an aluminum oxide insulating layer through the anodic oxidation method or micro-arc oxidation, (4) forming the first-stage conducting layer body on the surface of the insulating layer through the physical vapor deposition, and (5) forming the second-stage conducting layer body on the surface of the first-stage conducting layer body through the electrochemical deposition method. The high heat conduction substrate is stable in performance at the high temperature, cannot crack, and meanwhile solves the problem of metal diffusion of the buffering layer effectively.

Description

technical field [0001] The invention relates to a high thermal conductivity substrate and a preparation method thereof. Background technique [0002] In recent years, the electronic industry has developed vigorously, various high-power electronic components emerge in an endless stream, and the density of components on circuit boards is also increasing. This makes the heat generated greatly increase while the energy consumption increases. If the heat cannot be transferred in time, it will affect the performance of the components. The traditional insulating substrate made of epoxy resin has a large thermal resistance, which is far from meeting the needs of high-power heat dissipation; the substrate made of ceramic materials, although its thermal conductivity is far greater than that of epoxy resin, the gap between the substrate and the radiator The connection between them requires the use of thermally conductive adhesive, and the thermal resistance of the thermally conductiv...

AI Technical Summary

Problems solved by technology

The method mentioned in Patent No. 200810149489.3 is to use copper as a buffer layer, but copper is easy to diffuse into the porous insulating layer, which reduces the insulation

In this regard, the inventor's solution is to add a barrier layer composed of tungsten, titanium, tantalum or their alloys between the buffer layer and the insulating layer. However, the thermal conductivity of titanium is only 21.9 W·m -1·K-1, only one tenth of aluminum (220W·m-1·K-1) First, it seriously affects the heat dissipation effect; and the thermal expansion coefficient of tantalum and tungsten is even lower than that of alumina (tantalum is 6×10-6 / ℃, tungsten is only 4.5×10-6 / ℃), contrary to the purpose of adding a buffer layer

Images