System and method for improving photolithography process capacity

Abstract

The invention discloses a system and method for improving the photolithography process capacity. The system and the method have the advantages and beneficial effects that relevant parameters of a multi-gray-level circular illumination aperture are adjusted according to the photolithography process requirements, so that an incident ray irradiates the surface of a silicon wafer under the exposure conforming to the process requirement after passing through the multi-gray-level circular illumination aperture, and then the photoresist on the surface of the silicon wafer forms a final pattern, thus further completing the photolithography process; and the synthetic resolutions and process windows of the patterns in various dimensions can be effectively improved by the method, thus balancing the line width of the patterns in various dimensions, avoiding the problems of cost increase and yield reduction caused by many times of exposure processes, further improving the production efficiency and reducing the manufacturing cost and increasing the yield of the device.

Description

technical field [0001] The invention relates to a photolithography system and a photolithography method, in particular to a system and a method for enhancing photolithography process capability. Background technique [0002] The manufacture of semiconductor devices requires hundreds of processes. Photolithography, as the main process step of patterning, plays a pivotal role in the manufacture of semiconductor devices. figure 1 is a schematic structural diagram of a traditional photolithography exposure system; figure 2 yes figure 1 Schematic diagram of the top view structure of the circular aperture; as shown in the figure, the traditional photolithography exposure system includes: circular aperture 101, condenser lens 102 and projection lens 104, and circular aperture 101, condenser lens 102 and projection lens 104 Arranged from top to bottom in turn; when performing photolithography exposure process, photomask 103 is placed between condenser lens 102 and projection lens...

AI Technical Summary

Problems solved by technology

[0009] In view of the above-mentioned problems, the present invention provides a system and method for enhancing the lithography process capability, so as to overcome the lack of flexibility in balancing the line width size and process window of various patterns in the prior art, and it is difficult to process patterns of different sizes. The problem of achieving the best process balance, and at the same time overcome the problem that the double exposure method in the prior art leads to an increase in manufacturing cost and a decrease in production output

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