A kind of preparation method of antimony doped zinc oxide nanowire
A zinc oxide nanowire, antimony doping technology, applied in zinc oxide/zinc hydroxide, nanotechnology, nanotechnology and other directions, to achieve the effect of low preparation temperature
Active Publication Date: 2014-10-29
BEIJING INST OF NANOENERGY & NANOSYST
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[0004] In order to overcome the defect that p-type doping of zinc oxide nanowires needs to be carried out at high temperature, the purpose of the present invention is to provide a method for preparing antimony (Sb) doped zinc oxide nanowires at low temperature
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[0025] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention. Apparently, the described embodiments are only some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0026] The existing p-type doping method for zinc oxide nanowires requires the use of a solid-liquid-gas (VLS) mechanism, which needs to be carried out at extremely high temperatures, and is not suitable for preparing p-type doped on flexible substrates such as organic substances. ZnO nanowires, which severely limits the types of substrates available for growing nanowires.
[0027] The invention provides a method for preparing antimony-doped zinc oxide ...
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Abstract
The invention provides a method for preparing an antimony-doped zinc-oxide (ZnO) nanowire. The method is characterized by comprising the following steps of: preparing an antimony-doped solution and a hydrothermal synthesis solution, wherein the antimony-doped solution is the aqueous solution of antimony acetate, glycolic acid and sodium hydroxide, and the hydrothermal synthesis solution is the aqueous solution of zinc nitrate hexahydrate, hexamethylenetetramine and polyethyleneimine; weighing the antimony-doped solution and the hydrothermal synthesis solution according to the antimony doping proportion, mixing the antimony-doped solution with the hydrothermal synthesis solution, and adding aqueous ammonia to obtain a mixed solution; and finally carrying out hydrothermal synthesis in the mixed solution to obtain the antimony-doped ZnO nanowire, namely, putting a substrate with a ZnO seed crystal on the surface into the mixed solution to grow the antimony-doped ZnO nanowire hydrothermally. The method for preparing the antimony-doped ZnO nanowire through hydrothermal reaction is characterized by low preparation temperature and is suitable for preparing the antimony-doped ZnO nanowire on an organic matter and other flexible substrates.
Description
technical field [0001] The invention relates to the field of nanomaterial preparation, in particular to a method for preparing antimony-doped zinc oxide nanowires. Background technique [0002] Doped one-dimensional nanomaterials have great significance and broad prospects in the field of nanoelectronics. The combination of n-type and p-type doped materials can make p-n junctions, and p-n junctions have important applications in light-emitting diodes, transistors and photovoltaic devices. Given that ZnO is a material with both semiconductor and piezoelectric effects, and its synthesis method is relatively simple, stable and effective, ZnO has become a mainstay material in nanogenerators and piezoelectric electronics. Zinc oxide that has not been deliberately doped is naturally an n-type semiconductor. In recent years, doping zinc oxide with foreign elements such as nitrogen, phosphorus, and antimony has been extensively studied. The ability to successfully synthesize homog...
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IPC IPC(8): C01G9/02B82Y30/00
Inventor 王中林武文倬温肖楠肯普拉德尔
Owner BEIJING INST OF NANOENERGY & NANOSYST