Double photoresist structure and its processing method
A processing method and photoresist technology, applied in optics, optomechanical equipment, photosensitive materials for optomechanical equipment, etc., can solve the problem of poor pattern transfer fidelity, and achieve the effect of improving fidelity
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[0037] Example one
[0038] Reference figure 1 As shown, the double photoresist provided in the first embodiment is formed on the target layer 10. The double photoresist from bottom to top is: bottom anti-reflective layer (BARC) 11, positive photoresist layer 12, intermediate layer 13 and the negative photoresist layer 14. The bottom anti-reflection layer 11 is used to increase the intensity of the bottom light in the exposure process, and the material can be an existing BARC material, which can be an organic anti-reflection coating or an inorganic anti-reflection coating.
[0039] The inorganic anti-reflective coating is for example made of titanium (titanium), titanium oxide (titanium oxide), titanium nitride (titanium nitride), chromium oxide (chromium oxide), carbon (carbon), amorphous silicon (amorphous silicon), nitrogen The organic anti-reflective coating is composed of materials such as silicon nitride, silicon nitride oxide, and silicon carbon oxide; for example, the orga...
Example Embodiment
[0063] Example two
[0064] The structure and processing method of the dual photoresist provided in the second embodiment is roughly the same as that provided in the first embodiment, except that the dual photoresist on the target layer 10 from bottom to top is: bottom anti-reflective layer (BARC) 11. A negative photoresist layer, an intermediate layer and a water-soluble positive photoresist layer containing silicon. Among them, the material selection of each layer of the negative photoresist layer, the intermediate layer and the silicon-containing water-soluble positive photoresist layer is the same as in the first embodiment. The bottom anti-reflection layer 11 is a non-essential layer used to increase the intensity of the bottom light in the exposure process, and the material can be an existing BARC material.
[0065] In view of the difference between the second embodiment and the first embodiment, the following briefly introduces the processing method of the double photoresis...
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