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Double photoresist structure and its processing method

A processing method and photoresist technology, applied in optics, optomechanical equipment, photosensitive materials for optomechanical equipment, etc., can solve the problem of poor pattern transfer fidelity, and achieve the effect of improving fidelity

Active Publication Date: 2015-09-02
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in this process, the fidelity of the pattern transfer is not very good in the step where the upper pattern is transferred to the lower photoresist by etching

Method used

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  • Double photoresist structure and its processing method
  • Double photoresist structure and its processing method
  • Double photoresist structure and its processing method

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Experimental program
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Effect test

Embodiment 1

[0038] refer to figure 1As shown, the double photoresist provided in the first embodiment is formed on the target layer 10, and the double photoresist is sequentially as follows from bottom to top: bottom antireflection layer (BARC) 11, positive photoresist layer 12, intermediate layer 13 and negative photoresist layer 14 . The bottom anti-reflection layer 11 is used to increase the intensity of bottom light in the exposure process, and the material can be selected from existing BARC materials, and can be an organic anti-reflection coating or an inorganic anti-reflection coating.

[0039] The inorganic antireflection coating is made of, for example, titanium (titanium), titanium oxide (titanium oxide), titanium nitride (titanium nitride), chromium oxide (chromium oxide), carbon (carbon), amorphous silicon (amorphous silicon), nitrogen Silicon nitride (silicon nitride), silicon nitride oxide (silicon nitride oxide), silicon carbon oxide (silicon carbon oxide) and other materia...

Embodiment 2

[0064] The structure and processing method of the double photoresist provided in the second embodiment and the first embodiment are roughly the same, the only difference is that the double photoresist on the target layer 10 is sequentially from bottom to top: bottom anti-reflection layer (BARC) 11. Negative photoresist layer, intermediate layer and silicon-containing water-soluble positive photoresist layer. Wherein, the material selection of each layer of the negative photoresist layer, the intermediate layer and the silicon-containing water-soluble positive photoresist layer is the same as that of the first embodiment. The bottom anti-reflection layer 11 is an optional layer, which is used to increase the intensity of bottom light in the exposure process, and the material can be selected from existing BARC materials.

[0065]Aiming at the differences between the second embodiment and the first embodiment, the processing method of the double photoresist structure in the secon...

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Abstract

The invention discloses a dual tone photoresist structure. The dual tone photoresist structure comprises a first photoresist layer and a second photoresist layer which are sequentially formed on a target layer, wherein the polarity of the first photoresist layer is opposite to that of the second photoresist layer, an intermediate layer is formed between the first photoresist layer and the second photoresist layer, and the intermediate layer is used for preventing alkali in the positive photoresist and the negative photoresist and photoacid formed by exposure from mutually diffusing. Furthermore, the invention further provides a processing method of the dual tone photoresist structure. By adopting the technical scheme disclosed by the invention, the alkali in the positive photoresist and the negative photoresist and the photoacid formed by exposure can be prevented from mutually diffusing so as not to influence the precise degree of patterns on the dual tone photoresist; meanwhile, the reproduction quality of the patterns transferred to the lower layer photoresist from the upper layer photoresist can be improved due to the improvement of the etching selection ratio.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a double photoresist structure and a processing method thereof. Background technique [0002] Generally speaking, a semiconductor device such as a dynamic random access memory (DRAM) includes a large number of fine patterns, which are formed by transferring a mask pattern to a semiconductor layer through photolithography and etching processes. The process of photolithography is generally as follows: coating photoresist (PR) on the target layer to be patterned, then performing an exposure process to change the solubility of the photoresist in some areas, and then performing a development process to form a pattern that exposes the target layer. The photoresist pattern, the above process completes the transfer of the mask pattern to the photoresist. An etching process is performed using the photoresist pattern as a mask to transfer the photoresist pattern onto the semicon...

Claims

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Application Information

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IPC IPC(8): G03F7/11G03F7/00G03F7/038G03F7/039
Inventor 胡华勇伍强
Owner SEMICON MFG INT (SHANGHAI) CORP
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