Manufacturing method for two-layer silicon epitaxial wafer used for bipolar transistor
A technology of bipolar transistors and silicon epitaxial wafers, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as double breakdown and abnormal junction characteristics
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[0012] A method for manufacturing a double-layer silicon epitaxial wafer for bipolar transistors, comprising the following steps: (1) Growth of the first layer of silicon epitaxial wafer: Although HCl corrosion at high temperature is beneficial to improving the lattice structure, it will also produce some By-products, and a layer of substrate surface is peeled off at high temperature, so some of these by-products and impurities in the substrate also enter the atmosphere. In order to ensure the quality of the crystal lattice, the polishing temperature should be appropriately increased, generally set at 1170°C-1190°C. In order to reduce the volatilization of substrate impurities, it is necessary to reduce the polishing amount, and choose to remove the polishing amount of 0.1-0.2 μm. The first layer is a high-concentration epitaxial layer. The high-concentration epitaxial layer is prone to condensation and nucleation of dopants, and the surface becomes foggy. Therefore, the proc...
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