Solar selective absorbing coating and preparation method thereof
An absorption coating and selective technology, applied in solar thermal power generation, coatings, solar thermal devices, etc., can solve the problems of poor thermal stability, low operating temperature, complex preparation process, etc., to achieve good thermal stability, selective absorption good effect
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[0049] Preparation of solar selective absorbing coating of the present invention
[0050] Copper sheet was used as the base material, ultrasonically cleaned with metal cleaning agent for 15 minutes, then rinsed with water, then ultrasonically cleaned with ethanol and acetone for 15 minutes, dried and placed in the tungsten target sputtering chamber of the sputtering equipment chamber.
[0051] Use mechanical pump and molecular pump to vacuumize the chamber, when the vacuum degree of the chamber reaches 7×10 -4 Finally, high-purity argon gas is introduced into the chamber, and the target is pre-sputtered with high-purity argon gas for 5 minutes before sputtering. The tungsten target is used, the sputtering pressure is 0.05Pa-3Pa, and the sputtering power is 50W- 150W, sputtering time is 5-15 minutes, forming a tungsten film on the substrate.
[0052] Close the argon valve, evacuate the chamber, and feed high-purity argon and high-purity oxygen into the chamber; the ratio of ar...
Embodiment 1
[0056] Copper sheet was used as the base material, ultrasonically cleaned with metal cleaning agent for 15 minutes, then rinsed with water, then ultrasonically cleaned with ethanol and acetone for 15 minutes, dried and placed in the tungsten target sputtering chamber of the sputtering equipment chamber.
[0057] Use mechanical pump and molecular pump to vacuumize the chamber, when the vacuum degree of the chamber reaches 7×10 -4 Finally, high-purity argon gas was introduced into the chamber, and the target was pre-sputtered with high-purity argon gas for 5 minutes before sputtering. Using a tungsten target, the sputtering pressure was 0.5Pa, and the sputtering power was 80W. The time is 8 minutes, and a tungsten thin film, that is, an infrared reflection layer, is formed on the substrate.
[0058] Close the argon valve, vacuumize the chamber, and feed high-purity argon and high-purity oxygen into the chamber; the argon flow rate is 30 sccm, the oxygen flow rate is 6 sccm, the ...
Embodiment 2
[0063] Copper sheet was used as the base material, ultrasonically cleaned with metal cleaning agent for 15 minutes, then rinsed with water, then ultrasonically cleaned with ethanol and acetone for 15 minutes, dried and placed in the tungsten target sputtering chamber of the sputtering equipment chamber.
[0064] Use mechanical pump and molecular pump to vacuumize the chamber, when the vacuum degree of the chamber reaches 7×10 -4 Afterwards, high-purity argon gas was introduced into the chamber, and the target was pre-sputtered with high-purity argon gas for 5 minutes before sputtering. Using a tungsten target, the sputtering pressure was 3Pa, the sputtering power was 50W, and the sputtering time was For 5 minutes, a tungsten thin film, that is, an infrared reflective layer, is formed on the substrate.
[0065] Close the argon gas valve, evacuate the chamber, and feed high-purity argon and high-purity oxygen into the chamber; the argon flow rate is 40 sccm, the oxygen flow rate...
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Abstract
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