Surface-mounted inductor and wafer-level manufacturing method thereof
A surface-mount, wafer-level technology, applied in the field of surface-mount inductance devices and their wafer-level manufacturing, can solve the problems of difficult ultra-thin packaging, reduced assembly yield, and low inductance accuracy, and achieve high density The effect of mounting, improving inductance accuracy, and improving dimensional accuracy
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Embodiment 1
[0057] see Figure 4 and Figure 5 , a surface mount inductance device of the present invention, the metal wiring layer 200 is disposed on the surface of the substrate 110, Figure 5 In the metal wiring layer 200, only the metal wiring layer I 210 and the metal wiring layer II 220 are shown as an example. The metal wiring layer II 220 is arranged above the metal wiring layer I 210, and the two are connected through the dielectric layer via hole 401 to realize electrical communication. . The metal wiring layer I 210 and the metal wiring layer II 220 respectively extend to the electrode regions on both sides, and are respectively connected to the electrodes 300 of equal height on both sides. A metal protection layer 600 is provided inside the surface protection layer opening pattern 501. The metal protection layer 600 extends downwards to wrap the sidewall of the electrode 300. The material of the metal protection layer 600 is an inert metal such as nickel or gold. The metal p...
Embodiment 2
[0059] see Figure 4 and Figure 6 , a surface mount inductance device of the present invention differs from the first embodiment as follows, a passivation layer 700 may also be provided between the substrate 110 and the metal wiring layer 200 to improve the reliability of the inductance device. Figure 6 In the metal wiring layer 200, only the metal wiring layer I 210 and the metal wiring layer II 220 are shown as an example. The metal wiring layer II 220 is arranged above the metal wiring layer I 210, and the two are connected through the dielectric layer via hole 401 to realize electrical communication. . The metal wiring layer I 210 and the metal wiring layer II 220 respectively extend to the electrode areas on both sides, and are respectively connected to the electrodes 300 of equal height on both sides. If necessary, the metal wiring layer I 210 and the metal wiring layer II 220 can be bent. The cross-section of the surface protection layer opening pattern 501 is recta...
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Abstract
Description
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Application Information
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